Evidence of relationship between mechanical stress and leakage current in AlGaN/GaN transistor after storage test

Microelectronics Reliability

Volumn 52, Issue 9-10, 2012, Pages 2184-2187

  Lambert, B ^a   Labat, N ^b   Carisetti, D ^c   Karboyan, S ^d   Tartarin, J G ^d   Thorpe, J ^e   Brunel, L ^a,b   Curutchet, A ^b   Malbert, N ^b   Latu Romain, E ^f   Mermoux, M ^g  

^a United Monolithic Semiconductor   (France)

^b UNIVERSITÉ BORDEAUX 1   (France)

^c THALES RESEARCH AND TECHNOLOGY   (France)

^d UNIVERSITÉ DE TOULOUSE   (France)

^e United Monolithic Semiconductor   (Germany)

^f SERMA TECHNOLOGIES   (France)

^g LEPMI   (France)

Author keywords

[No Author keywords available]

Indexed keywords

ALGAN; ALGAN/GAN; ANALYSIS TECHNIQUES; CONDUCTION MECHANISM; CURRENT PATHS; CURRENT SIGNATURES; ELECTRICAL CHARACTERIZATION; ELECTRON TRANSPORT; FIELD PLATES; GATE STRUCTURE; LEAKAGE PATHS; MECHANICAL STRESS; OPTICAL BEAM INDUCED RESISTANCE CHANGES; REVERSE BIAS; SILICON TECHNOLOGIES; STORAGE TESTS; THERMIONIC FIELD EMISSION;

ELECTRIC RESISTANCE; GALLIUM NITRIDE; HIGH ELECTRON MOBILITY TRANSISTORS; LEAKAGE CURRENTS; TOPOLOGY;

STRESSES;

EID: 84866733072     PISSN: 00262714     EISSN: None     Source Type: Journal    
DOI: 10.1016/j.microrel.2012.06.100     Document Type: Article

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