Reliability data's of 0.5 μm AlGaN/GaN on SiC technology qualification

Microelectronics Reliability

Volumn 52, Issue 9-10, 2012, Pages 2200-2204

  Lambert, B ^a   Thorpe, J ^b   Behtash, R ^b   Schauwecker, B ^b   Bourgeois, F ^b   Jung, H ^b   Bataille, J ^a   Mezenge, P ^a   Gourdon, C ^a   Ollivier, C ^a   Floriot, D ^a   Blanck, H ^b  

^a United Monolithic Semiconductor   (France)

^b United Monolithic Semiconductor   (Germany)

Author keywords

[No Author keywords available]

Indexed keywords

ALGAN/GAN; C-BANDS; END OF LIVES; ENVIRONMENTAL TEST; FAILURE MECHANISM; FAILURE RATE; GATE-LEAKAGE CURRENT; INVERSE PIEZOELECTRIC EFFECTS; MANUFACTURING PROCESS; RELIABILITY DATA; RF POWER APPLICATIONS; SAFE OPERATING AREA; STORAGE TESTS;

ACTIVATION ENERGY; ENVIRONMENTAL TESTING; FAILURE ANALYSIS; GALLIUM NITRIDE; SILICON CARBIDE;

DIGITAL STORAGE;

EID: 84866731051     PISSN: 00262714     EISSN: None     Source Type: Journal    
DOI: 10.1016/j.microrel.2012.06.098     Document Type: Article

References (4)

1. Joh J et al. Gate current degradation mechanisms of GaN high electron mobility transistors. In: IEDM; 2010.
2. Jimenez. GaN on SiC degradation modes and reliability evaluation. tutorial. In: ESREF; 2011.
3. Shealy JB et al. A manufacturable, high power RF gallium nitride (GaN) technology portfolio with 65 V operation and enhanced linearity. In: COMCAS; 2011.
4. Floriot D et al. New qualified industrial AlGaN/GaN HEMT process: power performances & reliability figures of merit. In: EuMWC; 2012.