Investigation and reduction of leakage current associated with gate encapsulation by sinx in AlGaN/GaN HFETs

2011 International Conference on Compound Semiconductor Manufacturing Technology, CS MANTECH 2011

Volumn , Issue , 2011, Pages

  Chevtchenko, S A ^a   Kurpas, P ^a   Chaturvedi, N ^a   Lossy, R ^a   Wurfl J ^a  

^a LEIBNIZ INSTITUT FÜR HÖCHSTFREQUENZTECHNIK   (Germany)

Author keywords

AlGaN GaN hfet; Dielectric passivation; Hemt; Leakage current

Indexed keywords

ALGAN/GAN HFETS; DIELECTRIC PASSIVATION; GATE ENCAPSULATION; GATE-LEAKAGE CURRENT; ORDERS OF MAGNITUDE; POWER TRANSISTORS; REPRODUCIBILITIES; STANDARD DEVIATION;

GALLIUM NITRIDE; HIGH ELECTRON MOBILITY TRANSISTORS; POWER ELECTRONICS; SEMICONDUCTOR DEVICE MANUFACTURE; TRANSISTORS;

LEAKAGE CURRENTS;

EID: 84887358054     PISSN: None     EISSN: None     Source Type: Conference Proceeding    
DOI: None     Document Type: Conference Paper

References (4)

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3. P. Kordos, P. Kudela, D. Gregusova, and D. Donoval, The effect of passivation on the performance of AlGaN/GaN heterostructure field-effect transistors, Semicond. Sci. Technol., Vol. 21, 1592-1596, 2006.
4. Fabio Sacconi, Michael Povolotskyi, Aldo Di Carlo, Strain effects in SiN-passivated GaN-based HEMT devices, J. Comput. Electron., Vol. 5, 115-118, 2006.