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Volumn 22, Issue 9, 2012, Pages

Investigation of silicon/glass anodic bonding with PECVD silicon carbide as the intermediate layer

Author keywords

[No Author keywords available]

Indexed keywords

ANODIC BONDING; CHEMICAL VAPOR DEPOSITED SILICON CARBIDE; INTERMEDIATE LAYERS; LEAK RATE; PASSIVATION LAYER; STRESS GRADIENT;

EID: 84866327657     PISSN: 09601317     EISSN: 13616439     Source Type: Journal    
DOI: 10.1088/0960-1317/22/9/095011     Document Type: Article
Times cited : (7)

References (18)
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    • Rogers T and Kowal J 1995 Sensors Actuators A 46-47 113-20
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    • Rogers, T.1    Kowal, J.2
  • 9
    • 22144466596 scopus 로고    scopus 로고
    • Anodic bonding of glass and silicon wafers with an intermediate silicon nitride film and its application to batch fabrication of SPM tip arrays
    • DOI 10.1016/j.mejo.2005.04.057, PII S0026269205001874
    • Hsieh G W, Tsai C H and Lin W C 2005 Microelectron. J. 36 678-82 (Pubitemid 40973310)
    • (2005) Microelectronics Journal , vol.36 , Issue.7 , pp. 678-682
    • Hsieh, G.-W.1    Tsai, C.-H.2    Lin, W.-C.3
  • 10
    • 0033750798 scopus 로고    scopus 로고
    • 10.1016/S0924-4247(99)00335-0 0924-4247 A
    • Sarro P M 2000 Sensors Actuators A 82 210-8
    • (2000) Sensors Actuators , vol.82 , Issue.1-3 , pp. 210-218
    • Sarro, P.M.1


* 이 정보는 Elsevier사의 SCOPUS DB에서 KISTI가 분석하여 추출한 것입니다.