Complementary metal-oxide semiconductor-compatible silicon carbide pressure sensors based on bulk micromachining

Micro and Nano Letters

Volumn 6, Issue 4, 2011, Pages 265-268

  Tang, Wei ^a,b   Zheng, Baixiang ^a   Liu, Lei ^a   Chen, Zhe ^a   Zhang, Haixia ^a  

^a PEKING UNIVERSITY   (China)

^b RESEARCH CENTER OF LASER FUSION   (China)

Author keywords

[No Author keywords available]

Indexed keywords

BULK MICROMACHINING TECHNOLOGY; BULK- MICROMACHINING; CAPACITIVE PRESSURE SENSORS; CHEMICAL VAPOUR DEPOSITION; DEPOSITED FILMS; ENVIRONMENTAL APPLICATIONS; KOH ETCHING; LINEAR RESPONSE; LOW TEMPERATURES; METAL-OXIDE; PRESSURE RANGES; SIC FILMS;

CHEMICAL RESISTANCE; CHEMICAL VAPOR DEPOSITION; COMPOSITE MICROMECHANICS; ELECTRIC CONDUCTIVITY; MECHANICAL PROPERTIES; MICROMACHINING; PLASMA DEPOSITION; PLASMA ENHANCED CHEMICAL VAPOR DEPOSITION; PRESSURE SENSORS; SEMICONDUCTING SILICON; SILICON CARBIDE; TUNGSTEN;

SEMICONDUCTING SILICON COMPOUNDS;

METAL OXIDE; POTASSIUM CHLORIDE; SILICON CARBIDE; TUNGSTEN;

ARTICLE; BULK DENSITY; ELECTRIC CONDUCTIVITY; ELECTRIC POTENTIAL; LOW TEMPERATURE; MATERIAL STATE; NANOSENSOR; NONHUMAN; PRESSURE MEASUREMENT; SCANNING ELECTRON MICROSCOPY; SEMICONDUCTOR; VAPOR;

EID: 79957483823     PISSN: None     EISSN: 17500443     Source Type: Journal    
DOI: 10.1049/mnl.2011.0084     Document Type: Article

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