Detailed characterization of anodic bonding process between glass and thin-film coated silicon substrates

Sensors and Actuators, A: Physical

Volumn 86, Issue 1-2, 2000, Pages 103-107

  Lee, Thomas M H ^a   Lee, Debbie H Y ^a   Liaw, Connie Y N ^a   Lao, Alex I K ^a   Hsing, I Ming ^a  

^a HONG KONG UNIVERSITY OF SCIENCE AND TECHNOLOGY   (Hong Kong)

Author keywords

[No Author keywords available]

Indexed keywords

ACETONE; BONDING; COATINGS; GLASS; IONS; SEMICONDUCTING SILICON; SODIUM; SUBSTRATES; SURFACE PROPERTIES; THERMAL EFFECTS; THIN FILMS;

ANODIC BONDING; CORNING GLASSES; FISHER SLIDES;

SEMICONDUCTING FILMS;

EID: 0034297824     PISSN: 09244247     EISSN: None     Source Type: Journal    
DOI: 10.1016/S0924-4247(00)00418-0     Document Type: Article

References (9)

1. Schmidt M.A. Wafer-to wafer bonding for microstructure formation. Proc. IEEE. 86(8):1998;1574-1585. August.
2. Cozma A., Puers B. Characterization of the electrostatic bonding of silicon and pyrex glass. J. Micromech. Microeng. 5:1995;98-102.
3. Nese M., Hanneborg A. Anodic bonding of silicon to silicon wafers coated with aluminium, silicon oxide, polysilicon or silicon nitride. Sens. Actuators, A. 37-38:1993;61-67.
4. Go J.S., Cho Y.H. Experimental evaluation of anodic bonding process based on the Taguchi analysis of interfacial fracture toughness. Sens. Actuators, A. 73:1999;52-57.
5. Takagi H., Maeda R., Chung T.R., Suga T. Low-temperature bonding of silicon and silicon dioxide by the surface activation method. Sens. Actuators, A. 70:1998;164-170.
6. Kanda Y., Matsuda K., Murayama C., Sugaya J. The mechanism of field-assisted silicon-glass boning. Sens. Actuators, A. 21-23:1990;939-943.
7. Wallis G. Direct-current polarization during field-assisted glass-metal sealing. J. Am. Ceram. Soc. 53(10):1970;563-567. October.
8. Frye R.C., Griffith J.E., Wong Y.H. A field-assisted bonding process for silicon dielectric isolation. J. Electrochem. Soc. 133(8):1986;1673-1677. August.
9. Rogers T., Kowal J. Selection of glass, anodic bonding conditions and material compatibility for silicon-glass capacitive sensors. Sens. Actuators, A. 46-47:1995;113-120.