Selenium-doped silicon-on-insulator waveguide photodetector with enhanced sensitivity at 1550 nm

IEEE Photonics Technology Letters

Volumn 23, Issue 20, 2011, Pages 1517-1519

  Mao, Xue ^a   Han, Peide ^a   Gao, Lipeng ^a   Mi, Yanhong ^a   Hu, Shaoxu ^a   Fan, Yujie ^a   Zhao, Chunhua ^a   Wang, Qiming ^a  

^a INSTITUTE OF SEMICONDUCTORS   (China)

Author keywords

Deep level; photodetector; responses at subbandgap wavelength; selenium ion implantation; silicon waveguide

Indexed keywords

1550 NM; COMPLEMENTARY METAL OXIDE SEMICONDUCTORS; DEEP LEVEL; ENHANCED SENSITIVITY; FULLY COMPATIBLE; ION BEAM ENERGY; RESPONSIVITY; REVERSE BIAS; SILICON ON INSULATOR; SILICON ON INSULATOR WAVEGUIDE; SILICON RIB WAVEGUIDES; SILICON WAVEGUIDE; SUBBAND-GAP;

ION IMPLANTATION; IONS; OPTOELECTRONIC DEVICES; SELENIUM; SEMICONDUCTING SELENIUM COMPOUNDS; WAVEGUIDES;

PHOTODETECTORS;

EID: 80053278050     PISSN: 10411135     EISSN: None     Source Type: Journal    
DOI: 10.1109/LPT.2011.2163704     Document Type: Article

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