The effects of femtosecond laser irradiation and thermal annealing on the optoelectronic properties of silicon supersaturated with sulfur

Chinese Physics Letters

Volumn 29, Issue 4, 2012, Pages

  Hu, Shao Xu ^a   Han, Pei De ^a   Gao, Li Peng ^a   Mao, Xue ^a   Li, Xin Yi ^a   Fan, Yu Jie ^a  

^a INSTITUTE OF SEMICONDUCTORS   (China)

Author keywords

[No Author keywords available]

Indexed keywords

ABSORPTION SPECTROSCOPY; ANNEALING; CAPACITANCE; FEMTOSECOND LASERS; ION IMPLANTATION; IRRADIATION; OPTICAL PROPERTIES; SILICON WAFERS; SULFUR;

ELECTROCHEMICAL CAPACITANCE-VOLTAGE PROFILING; ELECTRONIC AND OPTICAL PROPERTIES; EQUILIBRIUM SOLUBILITIES; FEMTOSECOND LASER IRRADIATION; ION IMPLANTED; LASER THERMAL; OPTOELECTRONICS PROPERTY; SOLUBILITY LIMITS; SPECTROSCOPY MEASUREMENTS; THERMAL-ANNEALING;

ELECTROMAGNETIC PULSE;

EID: 84860244251     PISSN: 0256307X     EISSN: 17413540     Source Type: Journal    
DOI: 10.1088/0256-307X/29/4/046101     Document Type: Article

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