Influence of structural properties on ballistic transport in nanoscale epitaxial graphene cross junctions

Nanotechnology

Volumn 23, Issue 39, 2012, Pages

  Bock, Claudia ^a   Weingart, Sonja ^a   Karaissaridis, Epaminondas ^a   Kunze, Ulrich ^a   Speck, Florian ^b   Seyller, Thomas ^b  

^a RUHR UNIVERSITY BOCHUM   (Germany)

^b UNIVERSITY OF ERLANGEN NUREMBERG   (Germany)

Author keywords

[No Author keywords available]

Indexed keywords

BALLISTIC TRANSPORTS; BEND RESISTANCES; CROSS JUNCTION; DEVICE PROPERTIES; DIFFUSIVE TRANSPORT REGIME; EPITAXIAL GRAPHENE; GRADUAL TRANSITION; HALL BARS; MAGNETOTRANSPORTS; NANO SCALE; SCATTERING MECHANISMS; SILICON CARBIDE SUBSTRATES; STEP EDGE; TEMPERATURE DEPENDENT;

EPITAXIAL GROWTH; GRAPHENE; MONOLAYERS; SILICON CARBIDE; TRANSPORT PROPERTIES;

BALLISTICS;

EID: 84866315625     PISSN: 09574484     EISSN: 13616528     Source Type: Journal    
DOI: 10.1088/0957-4484/23/39/395203     Document Type: Article

References (47)

1. Sizov F and Rogalski A 2010 Prog. Quantum Electron. 34 278-347
2. Natori K 1994 J. Appl. Phys. 76 4879-90
3. Gupta M 2002 IEEE Potentials 21 13-6
4. Mateos J, Vasallo B G, Pardo D, González T, Galloo J S, Roelens Y and Bollaert S 2003 Nanotechnology 14 117-22
5. Knop M, Wieser U, Kunze U, Reuter D and Wieck A D 2006 Appl. Phys. Lett. 88 082110
6. Mozorov S V, Novoselov K S, Katsnelson M I, Schedin F, Elias D C, Jaszczak J A and Geim A K 2008 Phys. Rev. Lett. 100 016602
7. Hong X, Posadas A, Zou K, Ahn C H and Zhu J 2009 Phys. Rev. Lett. 102 136808
8. Mikhailov S A 2012 arXiv:1203.3983v1
9. Lin Y-M, Perebeinos V, Chen Z and Avouris P 2008 Phys. Rev. B 78 161409
10. Du X, Skachko I, Barker A and Andrei E Y 2008 Nature Nanotechnol. 3 491-5
11. Mayorov A S et al 2011 Nano Lett. 11 2396-9
12. Berger C et al 2004 J. Phys. Chem. B 108 19912-6
13. Emtsev K V et al 2009 Nature Mater. 8 203-7
14. Berger C et al 2006 Science 312 1191-6
15. First P H, de Heer W A, Seyller Th, Berger C, Stroscio J A and Moon J-S 2010 MRS Bull. 35 296-305
16. Kedzierski J, Hsu P-L, Healey P, Wyatt P W, Keast C L, Sprinkle M, Berger C and de Heer W A 2008 IEEE Trans. Electron Devices 55 2078-85
17. Shen T, Gu J J, Xu M, Wu Y Q, Bolen M L, Capano M A, Engel L W and Ye P D 2009 Appl. Phys. Lett. 95 172105
18. Zhang Y, Tan Y W, Stormer H L and Kim P 2005 Nature 438 201-4
19. Du X, Skachko I, Duerr F, Luican A and Andrei E Y 2009 Nature 462 192-5
20. Jobst J, Waldmann D, Speck F, Hirner R, Maude D K, Seyller Th and Weber H B 2010 Phys. Rev. B 81 195434
21. Weingart S, Bock C, Kunze U, Speck F, Seyller Th and Ley L 2009 Appl. Phys. Lett. 95 262101
22. Weingart S, Bock C, Kunze U, Emtsev K V, Seyller Th and Ley L 2010 Physica E 42 687-90
23. Riedl C, Coletti C, Iwasaki T, Zakharov A A and Starke U 2009 Phys. Rev. Lett. 103 246804
24. Speck F, Jobst J, Fromm F, Ostler M, Waldmann D, Hundhausen M, Weber H B and Seyller Th 2011 Appl. Phys. Lett. 99 122106
25. Speck F, Ostler M, Röhrl J, Jobst J, Waldmann D, Hundhausen M, Ley L, Weber H B and Seyller Th 2010 Mater. Sci. Forum 645-648 629-32
26. Röhrl J, Hundhausen M, Emtsev K V, Seyller Th, Graupner R and Ley L 2008 Appl. Phys. Lett. 92 201918
27. Ristein J, Mammadov S and Seyller Th 2012 Phys. Rev. Lett. 108 246104
28. Avishai Y and Band Y B 1989 Phys. Rev. Lett. 62 2527-30
29. Lauffer P, Emtsev K V, Graupner R, Seyller Th, Ley L, Reshanov S A and Weber H B 2008 Phys. Rev. B 77 155426
30. Yakes M K, Gunlycke D, Tedesco J L, Campbell P M, Myers-Ward R L, Eddy C R Jr, Gaskill D K, Sheehan P E and Laracuente A R 2010 Nano Lett. 10 1559-62
31. Odaka S, Miyazaki H, Li S-L, Kanda A, Morita K, Tanaka S, Miyata Y, Kataura H, Tsukagoshi K and Aoyagi Y 2010 Appl. Phys. Lett. 96 062111
32. Lin Y-M, Farmer D B, Jenkins K A, Wu Y, Tedesco J L, Myers-Ward R L, Eddy C R Jr, Gaskill D K, Dimitrakopoulos C and Avouris P 2011 IEEE Electron Device Lett. 32 1343-5
33. Jouault B et al 2010 Phys. Rev. B 82 085438
34. Ji S-H, Hannon J B, Tromp R M, Perebeinos V, Tersoff J and Ross F M 2012 Nature Mater. 11 114-9
35. Low T, Perebeinos V, Tersoff J and Avouris Ph 2012 Phys. Rev. Lett. 108 096601
36. Tzalenchuk A, Lara-Avila S, Kalaboukhov A, Paolillo S, Syväjärvi M, Yakimova R, Kazakova O, Janssen T J B M, Falko V and Kubatkin S 2010 Nature Nanotechnol. 5 186-9
37. Jobst J, Waldmann D, Emtsev K V, Seyller Th and Weber H B 2010 Mater. Sci. Forum 645-648 637-41
38. Yang Y and Murali R 2010 IEEE Electron Device Lett. 31 237-9
39. Han M Y, Özyilmaz B, Zhang Y and Kim P 2007 Phys. Rev. Lett. 98 206805
40. Molitor F, Stampfer C, Güttinger J, Jacobsen A, Ihn T and Ensslin K 2010 Semicond. Sci. Technol. 25 034002
41. Hirayama Y, Saku T, Tarucha S and Horikoshi Y 1991 Appl. Phys. Lett. 58 2672-4
42. Takagaki Y, Tarucha S, Herfort J and Ploog K 1997 Chaos Solitons Fractals 8 1359-79
43. Takagaki Y, Gamo K, Namba S, Ishida S, Takaoka S, Murase K, Ishibashi K and Aoyagi Y 1988 Solid State Commun. 68 1051-4
44. Büttiker M 1986 Phys. Rev. Lett. 57 1761-4
45. Blaikie R J, Cumming D R S, Cleaver J R A and Ahmed H 1995 J. Appl. Phys. 78 330-43
46. Ritter K A and Lyding J W 2009 Nature Mater. 8 235-42
47. Ihn T et al 2010 Mater. Today 13 44-50