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Materials Science Forum

Volumn 645-648, Issue , 2010, Pages 637-641

Transport properties of single-layer epitaxial graphene on 6H-SiC (0001)

(5) Jobst, J a Waldmann, D a Emtsev, K V b Seyller, Th a B weber, H a

a UNIVERSITY OF ERLANGEN NUREMBERG (Germany)

b MAX PLANCK INSTITUT FÜR FESTKÖRPERFORSCHUNG (Germany)

Author keywords

Electron phonon coupling; Epitaxial graphene; Quantum oscillations

Indexed keywords

DECOMPOSITION; ELECTRON-PHONON INTERACTIONS; SILICON CARBIDE; SUBSTRATES;

BROAD TEMPERATURE RANGES; ELECTRICAL MEASUREMENT; ELECTRON PHONON COUPLINGS; EPITAXIAL GRAPHENE; EXFOLIATED GRAPHENE; INTRINSIC PROPERTY; QUANTUM OSCILLATIONS; SHUBNIKOV DE-HAAS OSCILLATION;

GRAPHENE;

EID: 77955435916 PISSN: 02555476 EISSN: 16629752 Source Type: Book Series
DOI: 10.4028/www.scientific.net/MSF.645-648.637 Document Type: Conference Paper

Times cited : (6)

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