Nanoindentation of GaSe thin films

Nanoscale Research Letters

Volumn 7, Issue , 2012, Pages 1-6

  Jian, Sheng Rui ^a   Ku, Shin An ^b   Luo, Chih Wei ^b   Juang, Jenh Yih ^b  

^a I SHOU UNIVERSITY   (Taiwan)

^b NATIONAL CHIAO TUNG UNIVERSITY   (Taiwan)

Author keywords

GaSe thin films; Hardness; Nanoindentation; XRD

Indexed keywords

CONTINUOUS STIFFNESS MEASUREMENT; LOAD-DISPLACEMENT CURVE; NANOINDENTATION TECHNIQUES; NANOMECHANICAL PROPERTY; SI(111) SUBSTRATE; XRD; XRD PATTERNS; YOUNG'S MODULUS;

HARDNESS; LOADING; NANOINDENTATION; PULSED LASER DEPOSITION; X RAY DIFFRACTION;

THIN FILMS;

EID: 84866128385     PISSN: 19317573     EISSN: 1556276X     Source Type: Journal    
DOI: 10.1186/1556-276X-7-403     Document Type: Article

References (30)

1. Giulio MD, Micocci G, Sililiano P, Tepore A: Photoelectronic and optical properties of amorphous gallium-selenide thin films. J Appl Phys 1987, 62:4231.
2. Kyazym-zade AG, Agaeva AA, Salmanov VM, Mokhtari AG: Optical detectors on GaSe and InSe layered crystals. Tech Phys 2007, 52:1611.
3. Dejene FB: The structural and material properties of CuInSe2 and Cu(In, Ga)Se-2 prepared by selenization of stacks of metal and compound precursors by Se vapor for solar cell applications. Sol Energy Mater Sol Cells 2009, 93:577.
4. Pellicer-Porres J, Segura A, Ferrer C, Munoz V, Miguel AS, Polian A, Itie JP, Gauthier M, Pascarelli S: High-pressure x-ray-absorption study of GaSe. Phys Rev B 2002, 65:174103.
5. Zou L, Jin H, Lu WY, Li XD: Nanoscale structural and mechanical characterization of the cell wall of bamboo fibers. Mater Sci Eng C 2009, 29:1375.
6. Zhang J, Xu ZH, Webb RA, Li XD: Electrical self-healing of mechanically damaged zinc oxide nanobelts. Nano Lett 2011, 11:241.
7. Jian SR, Chen GJ, Lin TC: Berkovich nanoindentation on AlN thin films. Nanoscale Res Lett 2010, 5:935.
8. Jian SR, Ke WC, Juang JY: Mechanical characteristics of Mg-doped GaN thin films by nanoindentation. Nanosci Nanotechnol Lett 2012, 4:598.
9. Jian SR, Chen HG, Chen GJ, Jang JSC, Juang JY: Structural and nanomechanical properties of a-plane ZnO thin films deposited under different oxygen partial pressure. Curr Appl Phys 2012, 12:849.
10. Oliver WC, Pharr GM: An improved technique for determining hardness and elastic-modulus using load and displacement sensing indentation experiments. J Mater Res 1992, 7:1564.
11. Tsui TY, Pharr GM: Substrate effects on nanoindentation mechanical property measurement of soft films on hard substrates. J Mater Res 1999, 14:292.
12. Li XD, Bhushan B: A review of nanoindentation continuous stiffness measurement technique and its applications. Mater Charact 2002, 48:11.
13. Abdullah MM, Bhagavannarayana G, Wahab MA: Growth and characterization of GaSe single crystal. J Cryst Growth 2010, 312:1534.
14. Li XD, Gao HS, Murphy CJ, Gou LF: Nanoindentation of Cu2O nanocubes. Nano Letters 1903, 2004:4.
15. Mosca DH, Mattoso N, Lepienski CM, Veiga W, Mazzaro I, Etgens VH, Eddrief M: Mechanical properties of layered InSe and GaSe single crystals. J Appl Phys 2002, 91:140.
16. Jian SR, Juang JY: Indentation-induced mechanical deformation behaviors of AlN thin films deposited on c-plane sapphire. J Nanomater 2012, 2012:914184.
17. Wang GF, Li XD: Size dependency of the elastic modulus of ZnO nanowires: surface stress effect. Appl Phys Lett 2007, 91:231912.
18. Tao XY, Wang XN, Li XD: Nanomechanical characterization of one-step combustion-synthesized Al4B2O9 and Al18B4O33 nanowires. Nano Lett 2007, 7:3172.
19. Jian SR, Chen GJ, Juang JY: Nanoindentation-induced phase transformation in (110)-oriented Si single crystals. Curr Opin Solid State Mater Sci 2010, 14:69.
20. Bradby JE, Kucheyev SO, Williams JS, Jagadish C, Swain MV, Munroe P, Phillips MR: Contact-induced defect propagation in ZnO. Appl Phys Lett 2002, 80:4537.
21. Jian SR, Juang JY, Lai YS: Cross-sectional transmission electron microscopy observations of structural damage in Al0.16 Ga0.84N thin film under contact loading. J Appl Phys 2008, 103:033503.
22. Jian SR, Juang JY, Chen NC, Jang JSC, Huang JC, Lai YS: Nanoindentationinduced structural deformation in GaN/AlN multilayers. Nanosci Nanotechnol Lett 2010, 2:315.
23. Bull SJ: Nano-indentation of coatings. J Phys D Appl Phys 2005, 38:R393.
24. Jang J, Lance MJ, Wen S, Tsui TY, Pharr GM: Indentation-induced phase transformation in silicon: influences of load, rate and indenter angle on the transformation behavior. Acta Mater 2005, 53:1759.
25. Schwarz U, Olguin D, Cantarero A, Hanfland M, Syassen K: Effect of pressure on the structural properties and electronic band structure of GaSe. Phys Stat Sol B 2007, 244:244.
26. Nowak R, Sekino T, Maruno S, Niihara K: Deformation of sapphire induced by a spherical indentation on the (1010) plane. Appl Phys Lett 1996, 68:1063.
27. Chien CH, Jian SR, Wang CT, Juang JY, Huang JC, Lai YS: Cross-sectional transmission electron microscopy observations on the Berkovich indentation-induced deformation microstructures in GaN thin films. J Phys D Appl Phys 2007, 40:3985.
28. Johnson KL: Contact Mechanics. Cambridge: Cambridge University Press; 1985.
29. Hirth JP, Lothe J: Theory of Dislocations. New York: Wiley; 1981.
30. Lorenz D, Zeckzer A, Hilpert U, Grau P, Johnson H, Leipner HS: Pop-in effects as homogeneous nucleation of dislocations during nanoindentation. Phys Rev B 2003, 67:172101.