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Volumn 312, Issue 9, 2010, Pages 1534-1537

Growth and characterization of GaSe single crystal

Author keywords

A1. Crystal morphology; A1. High resolution X ray diffraction; A1. X ray diffraction; A2. Bridgman technique; A2. Single crystal growth; B2. Semiconducting gallium compounds

Indexed keywords

A2. BRIDGMAN TECHNIQUE; A2. SINGLE CRYSTAL GROWTH; BRIDGMAN TECHNIQUES; CRYSTAL MORPHOLOGIES; HIGH RESOLUTION X RAY DIFFRACTION;

EID: 77950044893     PISSN: 00220248     EISSN: None     Source Type: Journal    
DOI: 10.1016/j.jcrysgro.2010.01.022     Document Type: Article
Times cited : (39)

References (19)
  • 13
    • 77950040092 scopus 로고    scopus 로고
    • JCPDS data file no
    • JCPDS data file no. 37-931.
    • , vol.37-931


* 이 정보는 Elsevier사의 SCOPUS DB에서 KISTI가 분석하여 추출한 것입니다.