|
Volumn 312, Issue 9, 2010, Pages 1534-1537
|
Growth and characterization of GaSe single crystal
|
Author keywords
A1. Crystal morphology; A1. High resolution X ray diffraction; A1. X ray diffraction; A2. Bridgman technique; A2. Single crystal growth; B2. Semiconducting gallium compounds
|
Indexed keywords
A2. BRIDGMAN TECHNIQUE;
A2. SINGLE CRYSTAL GROWTH;
BRIDGMAN TECHNIQUES;
CRYSTAL MORPHOLOGIES;
HIGH RESOLUTION X RAY DIFFRACTION;
CRYSTAL GROWTH;
CRYSTALLIZATION;
DISLOCATIONS (CRYSTALS);
GRAIN BOUNDARIES;
MORPHOLOGY;
SCANNING ELECTRON MICROSCOPY;
SEMICONDUCTING GALLIUM;
SEMICONDUCTING GALLIUM COMPOUNDS;
SEMICONDUCTOR GROWTH;
X RAY DIFFRACTION;
X RAYS;
SINGLE CRYSTALS;
|
EID: 77950044893
PISSN: 00220248
EISSN: None
Source Type: Journal
DOI: 10.1016/j.jcrysgro.2010.01.022 Document Type: Article |
Times cited : (39)
|
References (19)
|