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Volumn 93, Issue 5, 2009, Pages 577-582

The structural and material properties of CuInSe2 and Cu(In,Ga)Se2 prepared by selenization of stacks of metal and compound precursors by Se vapor for solar cell applications

Author keywords

Band gap; Efficiency; Phases; Selenization; Single phase; Two stage

Indexed keywords

COPPER COMPOUNDS; DIFFRACTION; ENERGY GAP; FILM PREPARATION; GALLIUM; HOLOGRAPHIC INTERFEROMETRY; PHOTOVOLTAIC CELLS; SEMICONDUCTING SELENIUM COMPOUNDS; SOLAR CELLS; SOLAR ENERGY; THERMAL EVAPORATION; VAPORS;

EID: 62549088661     PISSN: 09270248     EISSN: None     Source Type: Journal    
DOI: 10.1016/j.solmat.2008.12.002     Document Type: Article
Times cited : (51)

References (14)
  • 4
    • 0035284008 scopus 로고    scopus 로고
    • sc in CIGS thin films solar cells using a transparent conducting ZnO:B window layer
    • sc in CIGS thin films solar cells using a transparent conducting ZnO:B window layer. Sol. Energy Mat. Sol. Cells 67 1-4 (2001) 267-271
    • (2001) Sol. Energy Mat. Sol. Cells , vol.67 , Issue.1-4 , pp. 267-271
    • Hagiwara, Y.1    Nakada, T.2    Kunioka, A.3
  • 8


* 이 정보는 Elsevier사의 SCOPUS DB에서 KISTI가 분석하여 추출한 것입니다.