Mechanical characteristics of mg-doped gan thin films by nanoindentation

Nanoscience and Nanotechnology Letters

Volumn 4, Issue 6, 2012, Pages 598-603

  Jian, Sheng Rui ^a   Ke, Wen Cheng ^b   Juang, Jenh Yih ^c  

^a I SHOU UNIVERSITY   (Taiwan)

^b YUAN ZE UNIVERSITY   (Taiwan)

^c NATIONAL CHIAO TUNG UNIVERSITY   (Taiwan)

Author keywords

GaN:Mg thin films; Hardness; Maximum shear stress; MOCVD; Nanoindentation

Indexed keywords

CONTACT STIFFNESS; CYCLOPENTADIENYLS; GAN THIN FILMS; HOMOGENEOUS NUCLEATION; LOAD-DISPLACEMENT CURVE; LOADING CYCLES; MAXIMUM SHEAR STRESS; MECHANICAL CHARACTERISTICS; MG CONCENTRATIONS; MG-DOPING; NANOINDENTATION TESTS; NANOINDENTERS; SAPPHIRE SUBSTRATES; SECONDARY ION MASS SPECTROSCOPY; YOUNG'S MODULUS;

FLOW RATE; GALLIUM NITRIDE; HARDNESS; LOADING; MAGNESIUM; MAGNESIUM PRINTING PLATES; METALLORGANIC CHEMICAL VAPOR DEPOSITION; SAPPHIRE; SECONDARY ION MASS SPECTROMETRY; SEMICONDUCTOR DOPING; THIN FILMS;

NANOINDENTATION;

EID: 84864830948     PISSN: 19414900     EISSN: 19414919     Source Type: Journal    
DOI: 10.1166/nnl.2012.1373     Document Type: Conference Paper

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