Gate capacitance in electrochemical transistor of single-walled carbon nanotube

Applied Physics Letters

Volumn 88, Issue 7, 2006, Pages

  Shimotani, Hidekazu ^d   Kanbara, Takayoshi ^e   Iwasa, Yoshihiro ^e   Tsukagoshi, Kazuhito ^a   Aoyagi, Yoshinobu ^a,b   Kataura, Hiromichi ^c  

^a RIKEN   (Japan)

^b TOKYO INSTITUTE OF TECHNOLOGY   (Japan)

^c NATIONAL INSTITUTE OF ADVANCED INDUSTRIAL SCIENCE AND TECHNOLOGY AIST   (Japan)

^d TOHOKU UNIVERSITY   (Japan)

^e NONE

Author keywords

[No Author keywords available]

Indexed keywords

CHEMICAL CAPACITANCE; ELECTROCHEMICAL TRANSISTOR; GATE VOLTAGE; SINGLE-WALLED CARBON NANOTUBE;

CAPACITANCE; CARBON NANOTUBES; ELECTRIC POTENTIAL; ELECTROCHEMISTRY; TRANSISTORS;

GATES (TRANSISTOR);

EID: 32944463139     PISSN: 00036951     EISSN: None     Source Type: Journal    
DOI: 10.1063/1.2173626     Document Type: Article

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