Photo-stimulated resistive switching of ZnO nanorods

Nanotechnology

Volumn 23, Issue 38, 2012, Pages

  Park, Jinjoo ^a   Lee, Seunghyup ^a,b   Yong, Kijung ^a  

^a Pohang University of Science and Technology (POSTECH)   (South Korea)

^b Samsung Advanced Institute of Technology (SAIT)   (South Korea)

Author keywords

[No Author keywords available]

Indexed keywords

DARK CONDITIONS; DEVICE PERFORMANCE; ELECTRICAL STIMULI; HIGH DENSITY MEMORY; MEMORY TECHNOLOGY; MODEL SYSTEM; RESISTANCE STATE; RESISTIVE SWITCHING; RESISTIVE SWITCHING BEHAVIORS; RESISTIVE SWITCHING MEMORIES; STORAGE MECHANISM; ZNO NANOROD;

NANORODS; PHOTONS; ZINC OXIDE;

SWITCHING SYSTEMS;

NANOMATERIAL; ZINC OXIDE;

ARTICLE; CHEMISTRY; DATA STORAGE DEVICE; EQUIPMENT DESIGN; EQUIPMENT FAILURE ANALYSIS; IMPEDANCE; INSTRUMENTATION; LIGHT; NANOTECHNOLOGY; PHOTOMETRY; RADIATION EXPOSURE; SIGNAL PROCESSING;

COMPUTER STORAGE DEVICES; ELECTRIC IMPEDANCE; EQUIPMENT DESIGN; EQUIPMENT FAILURE ANALYSIS; LIGHT; NANOSTRUCTURES; NANOTECHNOLOGY; PHOTOMETRY; SIGNAL PROCESSING, COMPUTER-ASSISTED; ZINC OXIDE;

EID: 84866072265     PISSN: 09574484     EISSN: 13616528     Source Type: Journal    
DOI: 10.1088/0957-4484/23/38/385707     Document Type: Article

References (37)

1. Waser R and Aono M 2007 Nanoionics-based resistive switching memories Nature Mater. 6 833-40 (Pubitemid 350064191)
2. Sawa A 2008 Resistive switching in transition metal oxides Mater. Today 11 28-36 (Pubitemid 351680723)
3. Waser R, Dittmann R, Staikov G and Szot K 2009 Redox-based resistive switching memories - nanoionic mechanisms, prospects, and challenges Adv. Mater. 21 2632
4. Oka K, Yanagida T, Nagashima K, Kawai T, Kim J S and Park B H 2010 Resistive-switching memory effects of NiO nanowire/metal junctions J. Am. Chem. Soc. 132 6634
5. Oka K, Yanagida T, Nagashima K, Tanaka H and Kawai T 2009 Nonvolatile bipolar resistive memory switching in single crystalline NiO heterostructured nanowires J. Am. Chem. Soc. 131 3434
6. Yang Y C, Zhang X X, Gao M, Zeng F, Zhou W Y, Xie S S and Pan F 2011 Nonvolatile resistive switching in single crystalline ZnO nanowires Nanoscale 3 1917-21
7. Chang W Y, Lin C A, He J H and Wu T B 2010 Resistive switching behaviors of ZnO nanorod layers Appl. Phys. Lett. 96 242109
8. Cagli C, Nardi F, Harteneck B, Tan Z K, Zhang Y G and Ielmini D 2011 Resistive-switching crossbar memory based on Ni-NiO core-shell nanowires Small 7 2899-905
9. Kim S I, Lee J H, Chang Y W, Hwang S S and Yoo K H 2008 Reversible resistive switching behaviors in NiO nanowires Appl. Phys. Lett. 93 033503
10. Nagashima K, Yanagida T, Tanaka H, Seki S, Saeki A, Tagawa S and Kawai T 2008 Effect of the hetero interface on transport properties of in situ formed MgO/titanate heterostructured nanowires J. Am. Chem. Soc. 130 5378-82 (Pubitemid 351537099)
11. He L, Liao Z M, Wu H C, Tian X X, Xu D S, Cross G L W, Duesberg G S, Shvets I V and Yu D P 2011 Memory and threshold resistance switching in Ni/NiO core-shell nanowires Nano Lett. 11 4601-6
12. Nagashima K, Yanagida T, Oka K, Kanai M, Klamchuen A, Kim J S, Park B H and Kawai T 2011 Intrinsic mechanisms of memristive switching Nano Lett. 11 2114-8
13. Soci C, Zhang A, Xiang B, Dayeh S A, Aplin D P R, Park J, Bao X Y, Lo Y H and Wang D 2007 ZnO nanowire UV photodetectors with high internal gain Nano Lett. 7 1003-9 (Pubitemid 46717749)
14. He J H, Chang P H, Chen C Y and Tsai K T 2009 Electrical and optoelectronic characterization of a ZnO nanowire contacted by focused-ion-beam-deposited Pt Nanotechnology 20 135701
15. Kind H, Yan H Q, Messer B, Law M and Yang P D 2002 Nanowire ultraviolet photodetectors and optical switches Adv. Mater. 14 158-60 (Pubitemid 34091540)
16. He J H, Ho S T, Wu T B, Chen L J and Wang Z L 2007 Electrical and photoelectrical performances of nano-photodiode based on ZnO nanowires Chem. Phys. Lett. 435 119-22 (Pubitemid 46148868)
17. Law M, Greene L E, Johnson J C, Saykally R and Yang P D 2005 Nanowire dye-sensitized solar cells Nature Mater. 4 455-9 (Pubitemid 40774050)
18. Ungureanu M, Zazpe R, Golmar F, Stoliar P, Llopis R, Casanova F and Hueso L E 2012 A light-controlled resistive switching memory Adv. Mater. 24 2496-500
19. Yang Y C, Pan F, Liu Q, Liu M and Zeng F 2009 Fully room-temperature- fabricated nonvolatile resistive memory for ultrafast and high-density memory application Nano Lett. 9 1636-43
20. Xu N, Liu L F, Sun X, Liu X Y, Han D D, Wang Y, Han R Q, Kang J F and Yu B 2008 Characteristics and mechanism of conduction/set process in TiN/ZnO/Pt resistance switching random-access memories Appl. Phys. Lett. 92 232112
21. Lee S, Kim H, Park J and Yong K 2010 Coexistence of unipolar and bipolar resistive switching characteristics in ZnO thin films J. Appl. Phys. 108 076101
22. Suehiro J, Nakagawa N, Hidaka S, Ueda M, Imasaka K, Higashihata M, Okada T and Hara M 2006 Dielectrophoretic fabrication and characterization of a ZnO nanowire-based UV photosensor Nanotechnology 17 2567-73 (Pubitemid 43745795)
23. Li Y B, Della Valle F, Simonnet M, Yamada I and Delaunay J J 2009 High-performance UV detector made of ultra-long ZnO bridging nanowires Nanotechnology 20 045501
24. Vayssieres L 2003 Growth of arrayed nanorods and nanowires of ZnO from aqueous solutions Adv. Mater. 15 464-6
25. Baruah S and Dutta J 2009 Hydrothermal growth of ZnO nanostructures Sci. Technol. Adv. Mater. 10 013001
26. Greene L E, Law M, Goldberger J, Kim F, Johnson J C, Zhang Y F, Saykally R J and Yang P D 2003 Low-temperature wafer-scale production of ZnO nanowire arrays Angew. Chem. Int. Edn 42 3031-4 (Pubitemid 36897012)
27. Ke J J, Liu Z J, Kang C F, Lin S J and He J H 2011 Surface effect on resistive switching behaviors of ZnO Appl. Phys. Lett. 99 192106
28. Seol M, Kim H, Tak Y and Yong K 2010 Novel nanowire array based highly efficient quantum dot sensitized solar cell Chem. Commun. 46 5521-3
29. Chiang Y D, Chang W Y, Ho C Y, Chen C Y, Ho C H, Lin S J, Wu T B and HeJ H 2011 Single-ZnO-nanowire memory IEEE Trans. Electron Devices 58 1735-40
30. Qi J, Olmedo M, Ren J J, Zhan N, Zhao J Z, Zheng J G and Liu J L 2012 Resistive switching in single epitaxial ZnO nanoislands ACS Nano 6 1051-8
31. Soci C, Zhang A, Bao X Y, Kim H, Lo Y and Wang D L 2010 Nanowire photodetectors J. Nanosci. Nanotechnol. 10 1430-49
32. Schubert M M, Hackenberg S, van Veen A C, Muhler M, Plzak V and Behm R J 2001 CO oxidation over supported gold catalysts - inert and active support materials and their role for the oxygen supply during reaction J. Catal. 197 113-22 (Pubitemid 32097880)
33. 2: oxygen ionosorption and spectroscopic evidence for adsorbed oxygen ChemPhysChem 7 2041-52
34. Baek S, Song J and Lim S 2007 Improvement of the optical properties ofZnO nanorods by Fe doping Physica B 399 101-4 (Pubitemid 47361697)
35. Nian Y B, Strozier J, Wu N J, Chen X and Ignatiev A 2007 Evidence for an oxygen diffusion model for the electric pulse induced resistance change effect in transition-metal oxides Phys. Rev. Lett. 98 146403 (Pubitemid 46557459)
36. 2 thin films Appl. Phys. Lett. 91 012907 (Pubitemid 350092117)
37. Grill A, Viggiano W K J, Brady M and Laibowitz R 1992 Base electrodes for high dielectric constant oxide materials in silicon technology J. Mater. Res. 7 3260-5 (Pubitemid 23614656)