Nanostructures formed by displacement of porous silicon with copper: From nanoparticles to porous membranes

Nanoscale Research Letters

Volumn 7, Issue , 2012, Pages

  Bandarenka, Hanna ^a   Redko, Sergey ^a   Smirnov, Aleksandr ^a   Panarin, Andrei ^b   Terekhov, Sergei ^b   Nenzi, Paolo ^c   Balucani, Marco ^c   Bondarenko, Vitaly ^a  

^a BELARUSIAN STATE UNIVERSITY OF INFORMATICS AND RADIOELECTRONICS   (Belarus)

^b B I STEPANOV INSTITUTE OF PHYSICS   (Belarus)

^c SAPIENZA UNIVERSITY OF ROME   (Italy)

Author keywords

Copper; Displacement deposition; Nanostructures; Porous silicon

Indexed keywords

COPPER FILMS; COPPER NANOPARTICLES; COPPER STRUCTURES; COPPER SULPHATE; COPPER-MEMBRANE; DEPOSITION TIME; NANO-SIZED; POROUS MEMBRANES; SURFACE ENHANCED RAMAN SPECTROSCOPY; YOUNG MODULUS;

HYDROFLUORIC ACID; NANOSTRUCTURES; POROUS SILICON; RAMAN SPECTROSCOPY;

COPPER;

EID: 84866056093     PISSN: 19317573     EISSN: 1556276X     Source Type: Journal    
DOI: 10.1186/1556-276X-7-477     Document Type: Article

References (36)

1. Canham L: Properties of Porous Silicon. London: INSPEC; 1997.
2. Herino R: Nanocomposite materials from porous silicon. Mater Sci Eng 2000, B69-70:70-76.
3. Granitzer P, Rumpf K: Porous silicon-a versatile host material. Materials 2010, 3:943-999.
4. Dolgyi A, Bandarenka H, Prischepa S, Yanushkevich K, Nenzi P, Balucani M, Bondarenko V: Electrochemical deposition of Ni into mesoporous silicon. Electrochem Soc Trans 2012, 41(35):111-118.
5. Panarin A, Terekhov S, Kholostov K, Bondarenko V: SERS-active substrates based on n-type porous silicon. Appl Surf Sci 2010, 256:6969.
6. Coulthard I, Sham TK: Morphology of porous silicon layers: image of active sites from reductive deposition of copper onto the surface. Appl Surf Sci 1998, 126:287.
7. Tsuboi T, Sakka T, Ogata YH: Metal deposition into a porous silicon layer by immersion plating: influence of halogen ions. J Appl Phys 1998, 83:4502.
8. Kumar P, Huber P: Nucleation and growth of copper on mesoporous silicon by immersion plating. J Phys D: Appl Phys 2007, 40:2864.
9. Kern FW, Reinhardt KA: Handbook of Silicon Wafer Cleaning Technology. Norwich: William Andrew; 2008.
10. Ohmi T, Imaoka T, Sugiyama I, Kezuka T: Metallic impurities segregation at the interface between Si wafer and liquid during wet cleaning. J Electrochem Soc 1992, 139:3317.
11. Morinaga H, Suyama H, Ohmi T: Mechanism of metallic particle growth and metalinduced pitting on Si wafer surface in wet chemical processing. J Electrochem Soc 1994, 141:2834.
12. Chyan OMR, Chen JJ, Chien HY, Sees J, Hall L: Copper deposition on HF-etched silicon surfaces: morphological and kinetic studies. J Electrochem Soc 1996, 143:92-96.
13. Norga GJ, Platero M, Black KA, Reddy AJ, Michel J, Kimerling LC: Mechanism of copper deposition on silicon from dilute hydrofluoric acid solution. J Electrochem Soc 1997, 144:2801-2809.
14. Lee MK, Wang JJ, Wang HD: Deposition of copper films on silicon from cupric sulfate and hydrofluoric acid. J Electrochem Soc 1997, 144:1777-1780.
15. Magagnin L, Maboudian R, Carraro C: Selective deposition of thin copper films onto silicon with improved adhesion. Electrochem Solid State Lett 2001, 4(1):C5-C7.
16. Nagai T, Nakanishi S, Mukouyama Y, Ogata YH, Nakato Y: Periodic and chaotic oscillations of the electrochemical potential of p-Si in contact with an aqueous CuSO4 + HF solution, caused by electroless Cu deposition. Chaos 2006, 16:037106.
17. Klushko A, Balucani M, Ferrari A: Mechanical strength of porous silicon and its possible applications. Superlattices Microstruct 2008, 44:1-4.
18. Bandarenka H, Shapel A, Balucani M: Cu-Si nanocomposites based on porous silicon matrix. Solid State Phenomena 2009, 151:222-226.
19. Huang YM: Photoluminescence of copper-doped porous silicon. Appl Phys Lett 1996, 69(19):2855-2857.
20. Jiang WF, Shan WW, Ling H, Wang YS, Cao YX, Li XJ: Surface-enhanced Raman scattering of patterned copper nanostructure electrolessly plated on arrayed nanoporous silicon pillar. J Phys Condens Matter 2010, 22:415105.
21. Sun XY, Xu FQ: Controlling aspect ratio of copper group nanowire arrays by electrochemical deposition in the nanopores of AAO. Adv Mater Res 2011, 335(336):429-432.
22. Bondarenko AV: Chemical corrosive deposition of copper on porous silicon. In Physics Chemistry and Application of Nanostructures. Edited by Borisenko V, Gaponenko S, Gurin V. Singapore: World Scientific; 2005:435.
23. Bandarenka H, Balucani M, Crescenzi R, Ferrari A: Formation of composite nanostructures by corrosive deposition of copper into porous silicon. Superlattices Microstruct 2008, 44:583.
24. Bandarenka H, Redko S, Nenzi P, Balucani M, Bondarenko V: Optimization of chemical displacement deposition of copper on porous silicon. J Nanosci Nanotechnol, in press.
25. Bandarenka H, Prischepa S, Balucani M, Fittipaldi R, Vecchione A, Attanasio C: X-ray and electron backscattered diffractometry of copper nanoparticles grown on porous silicon. In Book of Abstracts: 2009 EMRS Fall Meeting. Edited by EMRS. Warsaw: EMRS; 2009:204.
26. Bandarenka H, Redko S, Nenzi P, Balucani M: Copper displacement deposition on nanostructured porous silicon. Nanotech 2011, 2:269.
27. Balucani M, Nenzi P, Crescenzi R, Dolgyi L, Klushko A, Bondarenko V: Transfer layer technology for the packaging of high power modules. In Proceedings of the Electronic System-Integration Technology Conference (ESTC): September 13-16, 2010; Berlin. New York: IEEE; 2010:3-186.
28. Balucani M, Nenzi P, Crescenzi R, Marracino P, Apollonio F, Liberti M, Densi A, Colizzi C: Technology and design of innovative flexible electrode for biomedical application. In Proceedings of the IEEE 61st Electronic Components and Technology Conference: May 31-June 3, 2011; Lake Buena Vista. New York: IEEE; 2011:1319-1324.
29. Kholostov KI, Filatova OS, Bondarenko VP: Investigation of structure of mesoporous silicon. Doklady BGUIR 2008, 4(34):72-76.
30. Canham LT: Pore type, shape, size, volume and surface area in porous silicon. In Properties of Porous Silicon. Edited by Canham LT. Norwich: INSPEC; 1997:83-88.
31. Bandarenka H, Petrovich V, Komar O, Nenzi P, Balucani M, Bondarenko V: Characterization of copper nanostructures grown on porous silicon by displacement deposition. Electrochem Soc Trans 2012, 41(45):13-22.
32. Vazquez G, Alvarez E, Navaza JM: Surface tension of alcohol + water from 20 to 50 °C. J Chem Eng Data 1995, 40:611-614.
33. Cassie ABD, Baxter S: Wettability of porous surfaces. Trans Faraday Soc 1944, 40:546-551.
34. Ichitsubo T, Tane M, Ogi H, Hirao M, Ikeda T, Nakajima H: Anisotropic elastic constants of lotus-type porous copper: measurements and micromechanics modeling. Acta Mater 2002, 50:4105.
35. Blom N, Odo J, Nakamoto K, Strommen DP: Resonance Raman studies of metal tetrakis(4-N-methylpyridyl)porphine: band assignments, structure-sensitive bands, and species equilibria. J Phys Chem 1986, 90:2847.
36. Schneider JH, Odo J, Nakamoto K: Interaction of water-soluble metalloporphyrins with nucleic acids studied by resonance Raman spectroscopy. Nucleic Acids Res 1988, 16:10323.