SERS-active substrates based on n-type porous silicon

Applied Surface Science

Volumn 256, Issue 23, 2010, Pages 6969-6976

  Panarin, A Yu ^a   Terekhov, S N ^a   Kholostov, K I ^b   Bondarenko, V P ^b  

^a B I STEPANOV INSTITUTE OF PHYSICS   (Belarus)

^b BELARUSIAN STATE UNIVERSITY OF INFORMATICS AND RADIOELECTRONICS   (Belarus)

Author keywords

n type porous silicon; Rhodamine 6G; SERS active substrates

Indexed keywords

NITROGEN COMPOUNDS; POROUS SILICON; RAMAN SCATTERING; RAMAN SPECTROSCOPY; SILVER COMPOUNDS; SURFACE SCATTERING;

ANODIZATION CURRENT; FORMATION PROCEDURE; IMMERSION PLATING; MORPHOLOGICAL PARAMETERS; NANO-STRUCTURED SILVERS; RHODAMINE 6G; SERS-ACTIVE SUBSTRATES; SURFACE ENHANCED RAMAN SCATTERING (SERS);

SUBSTRATES;

EID: 77955310029     PISSN: 01694332     EISSN: None     Source Type: Journal    
DOI: 10.1016/j.apsusc.2010.05.008     Document Type: Article

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