Copper displacement deposition on nanostructured porous silicon

Technical Proceedings of the 2011 NSTI Nanotechnology Conference and Expo, NSTI-Nanotech 2011

Volumn 2, Issue , 2011, Pages 269-272

  Bandarenka, H ^a   Redko, S ^a   Nenzi, P ^b   Balucani, M ^b  

^a BELARUSIAN STATE UNIVERSITY OF INFORMATICS AND RADIOELECTRONICS   (Belarus)

^b SAPIENZA UNIVERSITY OF ROME   (Italy)

Author keywords

Copper; Displacement deposition; Porous silicon

Indexed keywords

CRYSTALLOGRAPHIC ORIENTATIONS; CU DEPOSITION; CU FILMS; CU NANOPARTICLES; DISPLACEMENT METHOD; ELECTRICAL CONDUCTIVITY; NANO-SIZED CRYSTALS; NANO-STRUCTURED; NANOSIZED OBJECTS; POROUS SILICON LAYERS; POROUS SILICON SURFACES;

COPPER; ELECTRIC CONDUCTIVITY; FLUIDICS; HYDROFLUORIC ACID; NANOTECHNOLOGY;

POROUS SILICON;

EID: 81455140686     PISSN: None     EISSN: None     Source Type: Conference Proceeding    
DOI: None     Document Type: Conference Paper

References (6)

1. Canham, "Properties of Porous Silicon", EMIS Datareview series, INSPEC, London, 1997.
2. A. Panarin, S. Terekhov, K. Kholostov, Applied Surface Science 256, 6969, 2010.
3. Herino, "Nanocomposite materials from porous silicon", Materials Science and Engineering, B69-70, 70, 2000.
4. S. Zairi, C. Martelet, N. Jaffrezic-Renault, R. M'gaieth, H. Maaref, R. Lamartine. Thin Solid Films, 383, 325, 2001.
5. W. Jiang, W. Shan, H. Ling, Y. Wang, Y. Cao and X. Li, J. Phys.: Condens. Matter. 22, 415105, 2010.
6. G. Wang, H, Arwin, Sensors and Actuators B, 85, 95, 2002.