Lateral electrical transport and photocurrent in single and multilayers of two-dimensional arrays of Si nanocrystals

Journal of Applied Physics

Volumn 112, Issue 4, 2012, Pages

  Manousiadis, P ^a   Gardelis, S ^a   Nassiopoulou, A G ^a  

^a INSTITUTE OF MICROELECTRONICS   (Greece)

Author keywords

[No Author keywords available]

Indexed keywords

ABSORPTION MEASUREMENTS; ELECTRICAL MEASUREMENT; ELECTRICAL TRANSPORT; HIGH VOLTAGE; LOW VOLTAGES; MINORITY CARRIER LIFETIMES; PHOTON ENERGY; PHOTOVOLTAIC APPLICATIONS; SI NANOCRYSTAL; SILICON NANOCRYSTALS; SPACE CHARGE LIMITED CURRENTS; THERMAL OXIDATION; TRAP DENSITY; TWO-DIMENSIONAL ARRAYS;

MULTILAYERS; QUARTZ; SILICON; TWO DIMENSIONAL;

PHOTOCURRENTS;

EID: 84865837477     PISSN: 00218979     EISSN: None     Source Type: Journal    
DOI: 10.1063/1.4747906     Document Type: Article

References (33)

1. A. G. Nassiopoulou, in Encyclopedia of Nanoscience and Nanotechnology, edited by, H. S. Nalwa, (American Scientific, Valencia, CA, 2004), Vol. 9, pp. 793-813.
2. S. Gardelis, A. G. Nassiopoulou, N. Vouroutzis, and N. Frangis, J. Appl. Phys. 105, 113509 (2009). 10.1063/1.3138811
3. H. Mizuno, H. Koyama, and N. Koshida, Appl. Phys. Lett. 69, 3779 (1996). 10.1063/1.116996
4. A. G. Nassiopoulou and A. Salonidou, J. Nanosci. Nanotechnol. 7, 368 (2007).
5. I. Balberg, E. Savir, J. Jedrzejewski, A. G. Nassiopoulou, and S. Gardelis, Phys. Rev. B 75, 235329 (2007). 10.1103/PhysRevB.75.235329
6. I. Balberg, J. Appl. Phys. 110, 061301 (2011) 10.1063/1.3637636
7. S. Gardelis, A. G. Nassiopoulou, P. Manousiadis, S. Milita, A. Gkanatsiou, N. Frangis, and Ch. B. Lioutas, J. Appl. Phys. 111, 083536 (2012). 10.1063/1.4707939
8. M. Zacharias, J. Heitmann, R. Scholz, U. Kahler, M. Schmidt, and J. Blästing, Appl. Phys. Lett. 80, 661 (2002). 10.1063/1.1433906
9. P. Photopoulos, A. G. Nassiopoulou, D. N. Kouvatsos, and A. Travlos, Appl. Phys. Lett. 76, 1816 (2000). 10.1063/1.1290603
10. T. Matsumoto, J. Suzuki, M. Ohnuma, Y. Kanemitsu, and Y. Masumoto, Phys. Rev. B 63, 195322 (2001). 10.1103/PhysRevB.63.195322
11. D. Kovalev, J. Diener, H. Heckler, G. Polisski, N. Künzner, and F. Koch, Phys. Rev. B 61, 4485 (2000). 10.1103/PhysRevB.61.4485
12. M. S. Hybertsen, Phys. Rev. Lett. 72, 1514 (1994). 10.1103/PhysRevLett. 72.1514
13. R. Rölver, B. Berghoff, D. Bätzner, B. Spangenberg, and H. Kurz, Appl. Phys. Lett. 92, 212108 (2008) 10.1063/1.2936308
14. R. Rölver, B. Berghoff, D. Bätzner, B. Spangenberg, H. Kurz, M. Schmidt, and B. Stegemann, Thin Solid Films 516, 6763 (2006). 10.1016/j.tsf.2007.12.087
15. T. Kirchartz, K. Seino, J.-M. Wagner, U. Rau, and F. Bechstedt, J. Appl. Phys. 105, 104511 (2009). 10.1063/1.3132093
16. G. Conibeer, M. Green, R. Corkish, Y. Cho, E.-C. Cho, C.-W. Jiang, T. Fangsuwannarak, E. Pink, Y. Huang, T. Puzzer, T. Trupke, B. Richards, A. Shalav, and K.-l. Lin, Thin Solid Films 511, 654 (2006). 10.1016/j.tsf.2005.12.119
17. E.-C. Cho, S. Park, X. Hao, D. Song, G. Conibeer, S.-C. Park, and M. A. Green, Nanotechnology 19, 245201 (2008). 10.1088/0957-4484/19/24/245201
18. M. Ficcadenti, N. Pinto, L. Morresi, R. Murri, L. Serenelli, M. Tucci, M. Falconieri, A. Krasilnikova Sytchkova, M. L. Grilli, A. Mittiga, M. Izzi, L. Pirozzi, and S. R. Jadkar, Mater. Sci. Eng., B 159-160, 66 (2009). 10.1016/j.mseb.2008.10.054
19. S.-K. Kim, C.-H. Cho, B.-H. Kim, S.-J. Park, and J. W. Lee, Appl. Phys. Lett. 95, 143120 (2009). 10.1063/1.3242030
20. M. Stupca, M. Alsalhi, T. Al. Saud, A. Almuhanna, and M. H. Nayfeh, Appl. Phys. Lett. 91, 063107 (2007). 10.1063/1.2766958
21. Z. Yuan, G. Pucker, A. Marconi, F. Sgrignuoli, A. Anopchenko, Y. Jestin, L. Ferrario, P. Bellutti, and L. Pavesi, Sol. Energy Mater. Sol. Cells 95, 1224 (2011). 10.1016/j.solmat.2010.10.035
22. P. Manousiadis, S. Gardelis, and A. G. Nassiopoulou, J. Appl. Phys. 109, 083718 (2011). 10.1063/1.3575331
23. S. Gardelis, P. Manousiadis, and A. G. Nassiopoulou, Nanoscale Res. Lett. 6, 227 (2011). 10.1186/1556-276X-6-227
24. Ch. B. Lioutas, N. Vouroutzis, I. Tsiaoussis, N. Frangis, S. Gardelis, and A. G. Nassiopoulou, Phys. Status Solidi A 205, 2615 (2008). 10.1002/pssa.200880224
25. Z. A. K. Durrani and M. A. Rafiq, Microelectron. Eng. 86, 456 (2009). 10.1016/j.mee.2009.03.123
26. R. A. M. Hikmet, D. V. Talapin, and H. Weller, J. Appl. Phys. 93, 3509 (2003). 10.1063/1.1542940
27. R. W. de Boer, M. Jochemsen, T. M. Klapwijk, A. F. Morpurgo, J. Niemax, A. K. Tripathi, and J. Pflaum, J. Appl. Phys. 95, 1196 (2004). 10.1063/1.1631079
28. S. M. Sze, Physics of Semiconductor Devices, 2nd ed. (Wiley, 1981), p. 850.
29. V. A. Dalal, A. Madhavan, S. Saripalli, N. A. Chakravarty, and M. B. Noack, in Photovoltaic Specialists Conference (PVSC), 34th IEEE (IEEE Conference Publications, 2009), Article No. 5411412, pp. 001667-001671. 10.1109/PVSC.2009.5411412
30. D. Stieler, V. L. Dalal, K. Muthukrishnan, M. Noack, and E. Schares, J. Appl. Phys. 100, 036106 (2006). 10.1063/1.2234545
31. See http://pveducation.org/pvcdrom/appendicies/optical-properties-of- silicon for information about absorption coefficient of bulk Si.
32. J. W. Orton, B. J. Goldsmith, J. A. Chapman, and M. J. Powell, J. Appl. Phys. 53, 1602 (1982) 10.1063/1.330618
33. S. Saripalli, P. Sharma, P. Reusswig, and V. Dalal, J. Non-Cryst. Solids 354, 2426 (2008). 10.1016/j.jnoncrysol.2007.10.060