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Conference Record of the IEEE Photovoltaic Specialists Conference

Volumn , Issue , 2009, Pages 001667-001671

Device physics of nanocrystalline silicon solar cells

(5) Dalal, Vikram a Madhavan, Atul a Saripalli, S a Chakravarty, Nayan a Noack, Max a

a Iowa State University (United States)

Author keywords

[No Author keywords available]

Indexed keywords

CRYSTALLINE SILICONS; DEVICE PHYSICS; GRAIN SIZE; HIGHER TEMPERATURES; MINORITY CARRIER LIFETIMES; OPTICAL ABSORPTION; PERFORMANCE OF DEVICES; POST-DEPOSITION; RECOMBINATION DEFECTS;

CARRIER LIFETIME; DEFECT DENSITY; DEFECTS; ELECTRON MOBILITY; ELECTRONIC PROPERTIES; GRAIN SIZE AND SHAPE; SILICON SOLAR CELLS; SOLAR CELLS;

NANOCRYSTALLINE SILICON;

EID: 77951549934 PISSN: 01608371 EISSN: None Source Type: Conference Proceeding
DOI: 10.1109/PVSC.2009.5411412 Document Type: Conference Paper

Times cited : (2)

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