Molecular beam epitaxy of BaSi 2 films with grain size over 4μm on Si(111)

Japanese Journal of Applied Physics

Volumn 51, Issue 9, 2012, Pages

  Baba, Masakazu ^a   Nakamura, Kotaro ^a   Du, Weijie ^a   Khan, M Ajmal ^a   Koike, Shintaro ^a   Toko, Kaoru ^a   Usami, Noritaka ^b,c   Saito, Noriyuki ^d   Yoshizawa, Noriko ^d   Suemasu, Takashi ^a,c  

^a UNIVERSITY OF TSUKUBA   (Japan)

^b TOHOKU UNIVERSITY   (Japan)

^c JAPAN SCIENCE AND TECHNOLOGY AGENCY   (Japan)

^d NATIONAL INSTITUTE OF ADVANCED INDUSTRIAL SCIENCE AND TECHNOLOGY AIST   (Japan)

Author keywords

[No Author keywords available]

Indexed keywords

GRAIN SIZE; GROWTH CONDITIONS; REACTIVE DEPOSITION EPITAXY; SI (1 1 1); SI(111) SUBSTRATE; TRANSMISSION ELECTRON MICROGRAPH; TWO-STEP GROWTH;

EPITAXIAL FILMS; GRAIN SIZE AND SHAPE; MOLECULAR BEAM EPITAXY; SILICON;

EPITAXIAL GROWTH;

EID: 84865836383     PISSN: 00214922     EISSN: 13474065     Source Type: Journal    
DOI: 10.1143/JJAP.51.098003     Document Type: Article

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