SCOPUS 정보 검색 플랫폼

Volumn 358, Issue 17, 2012, Pages 2110-2113

Amorphous silicon diamond based heterojunctions with high rectification ratio

(8) Boutchich, Mohamed a Alvarez, José a Diouf, Djicknoum a Roca I Cabarrocas, Pere b Liao, Meiyong c Masataka, Imura c Koide, Yasuo c Kleider, Jean Paul a

a UNIV PARIS SUD (France)

b LABORATOIRE DE PHYSIQUE DES INTERFACES ET DES COUCHES MINCES (France)

c NATIONAL INSTITUTE FOR MATERIALS SCIENCE (Japan)

Author keywords

Amorphous silicon; Diamond; Ideality factor; p i n heterojunctions; Rectification ratio

Indexed keywords

A-SI:H; B-DOPED FILM; CURRENT INJECTIONS; DEPOSITED LAYER; DETECTION LIMITS; DOPED DIAMONDS; FORWARD BIAS; HETERO INTERFACES; HOMOEPITAXIAL DIAMOND; IDEALITY FACTORS; J-V CHARACTERISTICS; LOW BIAS VOLTAGE; P-I-N HETEROJUNCTIONS; P-TYPE; RECTIFICATION RATIO; REVERSE CURRENTS; SCHOTTKY CONTACTS; TEMPERATURE RANGE; TRANSPORT MECHANISM; TWO-REGIME;

AMORPHOUS SILICON; BIAS VOLTAGE; DIAMONDS; SCHOTTKY BARRIER DIODES; SILICON; TUNGSTEN; TUNGSTEN CARBIDE;

HETEROJUNCTIONS;

EID: 84865742420 PISSN: 00223093 EISSN: None Source Type: Journal
DOI: 10.1016/j.jnoncrysol.2011.12.067 Document Type: Conference Paper

Times cited : (12)

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