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Diamond and Related Materials

Volumn 11, Issue 10, 2002, Pages 1753-1759

Space-charge-limited current in hydrogenated amorphous carbon films containing silicon and oxygen

(3) Bozhko, A a Shupegin, M b Takagi, T c

a MOSCOW STATE UNIVERSITY (Russian Federation)

b MOSCOW POWER ENGINEERING INSTITUTE (Russian Federation)

c TOHOKU UNIVERSITY (Japan)

Author keywords

Amorphous hydrogenated carbon; Electrical conductivity; Silicon

Indexed keywords

DEPOSITION; ELECTRIC FIELDS; ELECTRIC SPACE CHARGE; REDUCTION; SILICON;

ENERGY GROWTH;

DIAMONDS;

CARBON;

EID: 0036792894 PISSN: 09259635 EISSN: None Source Type: Journal
DOI: 10.1016/S0925-9635(02)00156-5 Document Type: Article

Times cited : (24)

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