Diamond Schottky- pn diode with high forward current density and fast switching operation

Applied Physics Letters

Volumn 94, Issue 26, 2009, Pages

  Makino, Toshiharu ^a   Tanimoto, Satoshi ^b   Hayashi, Yusuke ^a   Kato, Hiromitsu ^a   Tokuda, Norio ^a   Ogura, Masahiko ^a   Takeuchi, Daisuke ^a   Oyama, Kazuhiro ^a   Ohashi, Hiromichi ^a   Okushi, Hideyo ^a   Yamasaki, Satoshi ^a,c  

^a NATIONAL INSTITUTE OF ADVANCED INDUSTRIAL SCIENCE AND TECHNOLOGY AIST   (Japan)

^b NISSAN MOTOR CO   (Japan)

^c UNIVERSITY OF TSUKUBA   (Japan)

Author keywords

[No Author keywords available]

Indexed keywords

ACTIVE LAYER; DIAMOND DIODES; FAST SWITCHING; FORWARD BIAS; FULLY DEPLETED; HIGH CURRENT DENSITIES; METAL LAYER; P-TYPE; RECTIFICATION RATIO; SCHOTTKY; SPECIFIC RESISTANCES; WEAK POINTS;

DIAMONDS; SCHOTTKY BARRIER DIODES;

DIODES;

EID: 67649973796     PISSN: 00036951     EISSN: None     Source Type: Journal    
DOI: 10.1063/1.3159837     Document Type: Article

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