2D simulations of interdigitated back contact heterojunction solar cells based on n-type crystalline silicon

Physica Status Solidi (C) Current Topics in Solid State Physics

Volumn 7, Issue 3-4, 2010, Pages 1033-1036

  Diouf, D ^a   Kleider, J P ^a   Desrues, T ^b   Ribeyron, P J ^b  

^a UNIV PARIS SUD   (France)

^b CEA GRENOBLE   (France)

Author keywords

[No Author keywords available]

Indexed keywords

2D SIMULATIONS; BULK LIFETIME; CRYSTALLINE SILICONS; CRYSTALLINE SUBSTRATES; CURRENT VOLTAGE CURVE; DENSITY OF DEFECTS; DOPING CONCENTRATION; HETEROJUNCTION SOLAR CELLS; HIGH-EFFICIENCY SOLAR CELLS; INTERDIGITATED BACK CONTACTS; SILICON HETEROJUNCTIONS; SURFACE RECOMBINATION VELOCITIES; TWO-DIMENSIONAL NUMERICAL SIMULATION;

CRYSTALLINE MATERIALS; EPITAXIAL GROWTH; HETEROJUNCTIONS; SEMICONDUCTOR DOPING; SOLAR CELLS; SURFACE DEFECTS; TWO DIMENSIONAL;

AMORPHOUS SILICON;

EID: 77952574239     PISSN: 18626351     EISSN: 16101642     Source Type: Journal    
DOI: 10.1002/pssc.200982778     Document Type: Conference Paper

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