High performance of diamond P+-i-n+ junction diode fabricated using heavily doped p+ and n+ layers

Applied Physics Letters

Volumn 94, Issue 15, 2009, Pages

  Oyama, Kazuihiro ^a,b   Ri, Sung Gi ^a   Kato, Hiromitsu ^a   Ogura, Masahiko ^a   Makino, Toshiharu ^a   Takeuchi, Daisuke ^a   Tokuda, Norio ^a   Okushi, Hideyo ^a   Yamasaki, Satoshi ^a,b  

^a NATIONAL INSTITUTE OF ADVANCED INDUSTRIAL SCIENCE AND TECHNOLOGY AIST   (Japan)

^b UNIVERSITY OF TSUKUBA   (Japan)

Author keywords

[No Author keywords available]

Indexed keywords

DIAMOND DIODES; DOPING LEVELS; HEAVILY DOPED; HOPPING CONDUCTIONS; IDEALITY FACTORS; JUNCTION DIODES; LARGE CURRENT DENSITIES; RECTIFICATION RATIOS;

DIAMONDS; DOPING (ADDITIVES);

DIODES;

EID: 65249188706     PISSN: 00036951     EISSN: None     Source Type: Journal    
DOI: 10.1063/1.3120560     Document Type: Article

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