Electrical and light-emitting properties from (111)-oriented homoepitaxial diamond p-i-n junctions

Diamond and Related Materials

Volumn 18, Issue 5-8, 2009, Pages 764-767

  Makino, Toshiharu ^a   Ri, Sung Gi ^a   Tokuda, Norio ^a   Kato, Hiromitsu ^a   Yamasaki, Satoshi ^a,b   Okushi, Hideyo ^a  

^a NATIONAL INSTITUTE OF ADVANCED INDUSTRIAL SCIENCE AND TECHNOLOGY AIST   (Japan)

^b UNIVERSITY OF TSUKUBA   (Japan)

Author keywords

Diamond; Electrical property; Light emission; p i n junction

Indexed keywords

CURRENT DENSITY-VOLTAGE CHARACTERISTICS; DEEP LEVEL; ELECTRICAL PROPERTY; EXCITONIC EMISSION; FORWARD CURRENTS; FREE EXCITONS; HIGH SERIES RESISTANCES; HIGH-CRYSTALLINE QUALITY; HOMOEPITAXIAL DIAMOND; INTRINSIC LAYER; JUNCTION TEMPERATURES; N-TYPE LAYERS; ORDERS OF MAGNITUDE; P-I-N JUNCTION; P-I-N JUNCTIONS; RECTIFICATION RATIO; ROOM TEMPERATURE; SERIES RESISTANCES; SPECIFIC CONTACT RESISTANCES; ULTRAVIOLET EMISSION; VISIBLE LIGHT EMISSION;

DIAMONDS; ELECTRIC PROPERTIES; ELECTRIC RECTIFIERS; LIGHT EMISSION; LIGHT MODULATION;

CURRENT VOLTAGE CHARACTERISTICS;

EID: 67349255278     PISSN: 09259635     EISSN: None     Source Type: Journal    
DOI: 10.1016/j.diamond.2009.01.016     Document Type: Article

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