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Volumn 59, Issue 9, 2012, Pages 2383-2389

Investigation of hole-blocking contacts for high-conversion-gain amorphous selenium detectors for X-ray imaging

Author keywords

Amorphous selenium (a Se); high conversion gain; high quantum efficiency; large area electronics; X ray imaging

Indexed keywords

AMORPHOUS SELENIUM; HIGH CONVERSIONS; HIGH QUANTUM EFFICIENCY; LARGE-AREA ELECTRONICS; XRAY IMAGING;

EID: 84865526346     PISSN: 00189383     EISSN: None     Source Type: Journal    
DOI: 10.1109/TED.2012.2204998     Document Type: Article
Times cited : (17)

References (13)
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    • Aug
    • Y. Hwang, R. Engel-Herbert, N. G. Rudawski, and S. Stemmer, "Effect of postdeposition anneals on the Fermi level response of HfO2/In0.53Ga0.47As gate stacks," J. Appl. Phys., vol. 108, no. 3, pp. 034111-1-034111-4, Aug. 2010.
    • (2010) J. Appl. Phys. , vol.108 , Issue.3 , pp. 034111-034111
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  • 5
    • 67349183396 scopus 로고    scopus 로고
    • Electrical study of sulfur passivated in0.53ga0.47as mos capacitor and transistor with ald al2o3 as gate insulator
    • Jul
    • H. C. Lin, W. E. Wang, G. Brammertz, M. Meuris, and M. Heyns, "Electrical study of sulfur passivated In0.53Ga0.47As MOS capacitor and transistor with ALD Al2O3 as gate insulator," Microelectron. Eng., vol. 86, no. 7-9, pp. 1554-1557, Jul. 2009.
    • (2009) Microelectron. Eng. , vol.86 , Issue.7-9 , pp. 1554-1557
    • Lin, H.C.1    Wang, W.E.2    Brammertz, G.3    Meuris, M.4    Heyns, M.5
  • 8
    • 80054882334 scopus 로고    scopus 로고
    • A combined interface and border trap model for highmobility substrate metal-oxide-semiconductor devices applied to ingaas and inp capacitors
    • Nov
    • G. Brammertz, A. Alian, D. H. C. Lin, M. Meuris, M. Caymax, and W. E. Wang, "A combined interface and border trap model for highmobility substrate metal-oxide-semiconductor devices applied to InGaAs and InP capacitors," IEEE Trans. Electron Devices, vol. 58, no. 11, pp. 3890-3897, Nov. 2011.
    • (2011) IEEE Trans. Electron Devices , vol.58 , Issue.11 , pp. 3890-3897
    • Brammertz, G.1    Alian, A.2    Lin, D.H.C.3    Meuris, M.4    Caymax, M.5    Wang, W.E.6
  • 10
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    • Border traps in al2o3/in0.53ga0.47as (100) gate stacks and their passivation by hydrogen anneals
    • Jan
    • E. J. Kim, L. Wang, P. M. Asbeck, K. C. Saraswat, and P. C. McIntyre, "Border traps in Al2O3/In0.53Ga0.47As (100) gate stacks and their passivation by hydrogen anneals," Appl. Phys. Lett., vol. 96, no. 1, pp. 012906-1-012906-3, Jan. 2010.
    • (2010) Appl. Phys. Lett. , vol.96 , Issue.1 , pp. 012906-012901
    • Kim, E.J.1    Wang, L.2    Asbeck, P.M.3    Saraswat, K.C.4    McIntyre, P.C.5


* 이 정보는 Elsevier사의 SCOPUS DB에서 KISTI가 분석하여 추출한 것입니다.