Hydrogen in oxide semiconductors

Journal of Materials Research

Volumn 27, Issue 17, 2012, Pages 2190-2198

  McCluskey, Matthew D ^a   Tarun, Marianne C ^a   Teklemichael, Samuel T ^a  

^a WASHINGTON STATE UNIVERSITY   (United States)

Author keywords

hydrogenation; infrared (IR) spectroscopy; oxide

Indexed keywords

ACCEPTOR DOPANTS; CATION VACANCIES; ELEVATED TEMPERATURE; ENERGY APPLICATIONS; H2 MOLECULE; HYDROGEN COMPLEXES; N-TYPE CONDUCTIVITY; N-TYPE DOPING; NATIVE DEFECT; OXIDE SEMICONDUCTOR; SHALLOW DONORS; TRANSPARENT CONDUCTING OXIDE; VIBRATIONAL PROPERTIES;

DEFECTS; ELECTRIC PROPERTIES; EXPERIMENTS; FLAT PANEL DISPLAYS; HYDROGENATION; OXIDES; TIN; TITANIUM DIOXIDE; ZINC OXIDE;

HYDROGEN;

EID: 84865516472     PISSN: 08842914     EISSN: 20445326     Source Type: Journal    
DOI: 10.1557/jmr.2012.137     Document Type: Review

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