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Physical Review Letters

Volumn 101, Issue 13, 2008, Pages

Hydrogen defect-level pinning in semiconductors: The muonium equivalent

(3) Lichti, R L a Chow, K H b Cox, S F J c,d

a TEXAS TECH UNIVERSITY (United States)

b UNIVERSITY OF ALBERTA (Canada)

c RUTHERFORD APPLETON LABORATORY (United Kingdom)

d UNIVERSITY COLLEGE LONDON (United Kingdom)

Author keywords

[No Author keywords available]

Indexed keywords

ELECTRIC CONDUCTIVITY; GALLIUM ALLOYS; GERMANIUM; HYDROGEN; IMPURITIES; SEMICONDUCTING SILICON; SEMICONDUCTING SILICON COMPOUNDS; SILICON; SILICON CARBIDE;

BAND ALIGNMENTS; CALCULATED VALUES; DONOR AND ACCEPTOR; MUONIUM; TRANSITION LEVEL; ZERO-POINT ENERGIES;

SEMICONDUCTOR MATERIALS;

EID: 53349151458 PISSN: 00319007 EISSN: 10797114 Source Type: Journal
DOI: 10.1103/PhysRevLett.101.136403 Document Type: Article

Times cited : (51)

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* 이 정보는 Elsevier사의 SCOPUS DB에서 KISTI가 분석하여 추출한 것입니다.