Influence of the dopant concentration in In-doped SrTiO3 on the structural and transport properties

Solid State Communications

Volumn 146, Issue 9-10, 2008, Pages 428-430

  Fix, T ^a   Bali, R ^a   Stelmashenko, N ^a   Blamire, M G ^a  

^a UNIVERSITY OF CAMBRIDGE   (United Kingdom)

Author keywords

A. Semiconductors; A. Thin films; B. Epitaxy

Indexed keywords

CONCENTRATION (PROCESS); DIODES; EPITAXIAL GROWTH; SEMICONDUCTOR DOPING;

P-TYPE BEHAVIOR; RECTIFYING DIODES;

STRONTIUM COMPOUNDS;

EID: 43049176645     PISSN: 00381098     EISSN: None     Source Type: Journal    
DOI: 10.1016/j.ssc.2008.03.019     Document Type: Article

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