Comparison of the crystalline quality of step-graded and continuously graded InGaAs buffer layers

Journal of Crystal Growth

Volumn 169, Issue 4, 1996, Pages 649-659

  Kidd, P ^a   Dunstan, D J ^a   Colson, H G ^a   Lourenco M A ^a   Sacedon A ^b   Gonzalez Sanz F ^b   Gonzalez L ^c   Gonzalez Y ^c   Garcia R ^c   Gonzalez D ^d   Pacheco, F J ^d   Goodhew, P J ^e  

^a UNIVERSITY OF SURREY   (United Kingdom)

^b UNIVERSIDAD POLITÉCNICA DE MADRID   (Spain)

^c CSIC   (Spain)

^d UNIVERSITY OF CÁDIZ   (Spain)

^e UNIVERSITY OF LIVERPOOL   (United Kingdom)

Author keywords

[No Author keywords available]

Indexed keywords

COMPOSITION EFFECTS; CRYSTAL LATTICES; CRYSTALLINE MATERIALS; EPITAXIAL GROWTH; LATTICE CONSTANTS; SEMICONDUCTING GALLIUM ARSENIDE; SEMICONDUCTING INDIUM COMPOUNDS; SEMICONDUCTOR GROWTH; SUBSTRATES;

BUFFER LAYERS; IN PLANE SURFACE LATTICE PARAMETERS;

SEMICONDUCTING FILMS;

EID: 0030566425     PISSN: 00220248     EISSN: None     Source Type: Journal    
DOI: 10.1016/S0022-0248(96)00665-3     Document Type: Article

References (23)

1. R. Beanland, D.J. Dunstan and P.J. Goodhew, Adv. Phys. 45 (1995) 87.
2. D.J. Dunstan, P. Kidd, L.K. Howard and R.H. Dixon, Appl. Phys. Lett. 59 (1991) 3390.
3. D.J. Dunstan, P. Kidd, P.F. Fewster, N.L. Andrew, R. Grey, J.P.R. David, L. González, Y. González, A. Sacedón and F. González-Sanz, Appl. Phys. Lett. 65 (1994) 839.
4. L.K. Howard, P. Kidd and R.H. Dixon, I Crystal Growth 125 (1992) 281.
5. D.J. Dunstan, P. Kidd, R. Beanland, A. Sacedón, E. Calleja, L. González, Y. Gonzalez and F.J. Pacheco, Mater. Sci. Eng. B, Proc. 1 ICMM, Barcelona, Oct., 1994, submitted.
6. F.K. LeGoues, MRS Bull. 21 (1996) 38.
7. A.V. Drigo, A. Aydinli, A. Camera, F. Genova, C. Rigo, C. Ferrari, P. Franzosi and G. Salviati, J. Appl. Phys. 66 (1989) 1975.
8. A. Sacedón, F. González-Sanz, E. Calleja, E. Muñoz, S.I. Molina, F.J. Pacheco, D. Araújo, R. Garcia, M. Lourenço, Z. Yang, P. Kidd and D.J. Dunstan, Appl. Phys. Lett. 66 (1995) 3334.
9. D.J. Dunstan, Philos. Mag. A 73 (1996) 1323.
10. S.J. Molina, F.J. Pacheco, D. Araújo, R. García, A. Sacedón, E. Calleja, Z. Yang and P. Kidd, Appl. Phys. Lett. 65 (1994) 2460.
11. D. González, D. Araújo, S.I. Molina, A. Sacedón, E. Calleja and R. Garcia, Mater. Sci. Eng. B 28 (1994) 497.
12. F. Briones, L. González and A. Ruiz, Appl. Phys. A 49 (1989) 729.
13. P.F. Fewster, Semicond. Sci. Technol. 8 (1993) 1915.
14. D.J. Dunstan, R.H. Dixon, P. Kidd, L.K. Howard, V.A. Wilkinson, J.D. Lambkin, C. Jeynes, M.P. Halsall, D. Lancefield, M.T. Emeny, P.J. Goodhew, K.P. Homewood, B.J. Sealy and A.R. Adams, J. Crystal Growth 126 (1993) 589.
15. V. Krishnamoorthy, P. Ribas and R.M. Park, Appl. Phys. Lett. 58 (1991) 2000.
16. P. Kidd, D.J. Dunstan, R. Grey, J.P.R. David, P.F. Fewster, N.L. Andrew, S.I. Molina and C.J. Kiely, in: Inst. Phys. Conf. Ser. No. 134: Microsc. Semicond. Mater. Conf., Oxford, April, 1993, Eds. A.G. Cullis, A.E. Staton-Bevan and J.L. Hutchison (IOP, Bristol) pp, 321-324.
17. J. Tersoff, Appl. Phys. Lett. 62 (1993) 693.
18. F.K. Le Goues, B.S. Meyerson and J.F. Morar, Phys. Rev. Lett. 66 (1991) 2903.
19. A.G. Cullis, MRS Bull. 21 (1996) 21.
20. R. Beanland, M. Aindow, T.B. Joyce, P. Kidd, M. Lourenço and P.J. Goodhew, J. Crystal Growth 149 (1995) 1.
21. K.L. Kavanagh, M.A. Capano, L.W. Hobbs, J.C. Barbow, P.M.J. Maree, W. Schaff, J.W. Mayer, D. Pettit, J.M. Woodall, J.A. Stroscio and R.M. Feenstra, J. Appl. Phys. 64 (1988) 4843.
22. P. Kidd and P.F. Fewster, Mater. Res. Soc. Symp. Proc. 317 (1994) 291.
23. P. Kidd, P.F. Fewster and N.L. Andrew, J. Phys. D: Appl. Phys. 28 (1995) A133.