-
1
-
-
0035133371
-
-
10.1103/PhysRevB.63.054416
-
W. H. Butler, X.-G. Zhang, T. C. Schulthess, and J. M. MacLaren, Phys. Rev. B 63, 054416 (2001). 10.1103/PhysRevB.63.054416
-
(2001)
Phys. Rev. B
, vol.63
, pp. 054416
-
-
Butler, W.H.1
Zhang, X.-G.2
Schulthess, T.C.3
MacLaren, J.M.4
-
2
-
-
0034906915
-
-
10.1103/PhysRevB.63.220403
-
J. Mathon and A. Umerski, Phys. Rev. B 63, 220403 (2001). 10.1103/PhysRevB.63.220403
-
(2001)
Phys. Rev. B
, vol.63
, pp. 220403
-
-
Mathon, J.1
Umerski, A.2
-
3
-
-
10044225881
-
-
10.1038/nmat1256
-
S. S. P. Parkin, C. Kaiser, A. Panchula, P. M. Rice, B. Hughes, M. Samant, and S.-H. Yang, Nature Mater. 3, 862-867 (2004). 10.1038/nmat1256
-
(2004)
Nature Mater.
, vol.3
, pp. 862-867
-
-
Parkin, S.S.P.1
Kaiser, C.2
Panchula, A.3
Rice, P.M.4
Hughes, B.5
Samant, M.6
Yang, S.-H.7
-
4
-
-
10044257857
-
-
10.1038/nmat1257
-
S. Yuasa, T. Nagahama, A. Fukushima, Y. Suzuki, and K. Ando, Nature Mater. 3 (12), 868-871 (2004). 10.1038/nmat1257
-
(2004)
Nature Mater.
, vol.3
, Issue.12
, pp. 868-871
-
-
Yuasa, S.1
Nagahama, T.2
Fukushima, A.3
Suzuki, Y.4
Ando, K.5
-
5
-
-
17044387382
-
230% room-temperature magnetoresistance in CoFeBMgOCoFeB magnetic tunnel junctions
-
DOI 10.1063/1.1871344, 092502
-
D. D. Djayaprawira, K. Tsunekawa, M. Nagai, H. Maehara, S. Yamagata, N. Watanabe, S. Yuasa, Y. Suzuki, and K. Ando, Appl. Phys. Lett. 86 (9), 092502 (2005). 10.1063/1.1871344 (Pubitemid 40495213)
-
(2005)
Applied Physics Letters
, vol.86
, Issue.9
, pp. 1-3
-
-
Djayaprawira, D.D.1
Tsunekawa, K.2
Nagai, M.3
Maehara, H.4
Yamagata, S.5
Watanabe, N.6
Yuasa, S.7
Suzuki, Y.8
Ando, K.9
-
6
-
-
33746595367
-
Giant tunneling magnetoresistance up to 410% at room temperature in fully epitaxial Co/MgO/Co magnetic tunnel junctions with bcc Co(001) electrodes
-
DOI 10.1063/1.2236268
-
S. Yuasa, A. Fukushima, H. Kubota, Y. Suzuki, and K. Ando, Appl. Phys. Lett. 89 (4), 042505 (2006). 10.1063/1.2236268 (Pubitemid 44147574)
-
(2006)
Applied Physics Letters
, vol.89
, Issue.4
, pp. 042505
-
-
Yuasa, S.1
Fukushima, A.2
Kubota, H.3
Suzuki, Y.4
Ando, K.5
-
7
-
-
51349167171
-
-
10.1063/1.2976435
-
S. Ikeda, J. Hayakawa, Y. Ashizawa, Y. M. Lee, K. Miura, H. Hasegawa, M. Tsunoda, F. Matsukura, and H. Ohno, Appl. Phys. Lett. 93, 082508 (2008). 10.1063/1.2976435
-
(2008)
Appl. Phys. Lett.
, vol.93
, pp. 082508
-
-
Ikeda, S.1
Hayakawa, J.2
Ashizawa, Y.3
Lee, Y.M.4
Miura, K.5
Hasegawa, H.6
Tsunoda, M.7
Matsukura, F.8
Ohno, H.9
-
8
-
-
31844455224
-
Dependence of tunnel magnetoresistance in MgO based magnetic tunnel junctions on Ar pressure during MgO sputtering
-
DOI 10.1143/JJAP.44.L1442
-
S. Ikeda, J. Hayakawa, Y. M. Lee, R. Sasaki, T. Meguro, F. Matsukura, and H. Ohno, Jpn. J. Appl. Phys., Part 2 44 (46-49), L1442-L1445 (2005). 10.1143/JJAP.44.L1442 (Pubitemid 43185017)
-
(2005)
Japanese Journal of Applied Physics, Part 2: Letters
, vol.44
, Issue.46-49
-
-
Ikeda, S.1
Hayakawa, J.2
Lee, Y.M.3
Sasaki, R.4
Meguro, T.5
Matsukura, F.6
Ohno, H.7
-
9
-
-
33646736969
-
-
10.1063/1.2176588
-
S. Ikeda, J. Hayakawa, Y. M. Lee, T. Tanikawa, F. Matsukura, and H. Ohno, J. Appl. Phys. 99 (8), 08A907 (2006). 10.1063/1.2176588
-
(2006)
J. Appl. Phys.
, vol.99
, Issue.8
-
-
Ikeda, S.1
Hayakawa, J.2
Lee, Y.M.3
Tanikawa, T.4
Matsukura, F.5
Ohno, H.6
-
10
-
-
21344471963
-
Distinctive current-induced magnetization switching in a current-perpendicular-to-plane giant-magnetoresistance nanopillar with a synthetic antiferromagnet free layer
-
DOI 10.1063/1.1949709, 242506
-
T. Ochiai, Y. Jiang, A. Hirohata, N. Tezuka, S. Sugimoto, and K. Inomata, Appl. Phys. Lett. 86 (24), 242506 (2005). 10.1063/1.1949709 (Pubitemid 40908734)
-
(2005)
Applied Physics Letters
, vol.86
, Issue.24
, pp. 1-3
-
-
Ochiai, T.1
Jiang, Y.2
Hirohata, A.3
Tezuka, N.4
Sugimoto, S.5
Inomata, K.6
-
11
-
-
34247863686
-
Magnetic tunnel junctions for spintronic memories and beyond
-
DOI 10.1109/TED.2007.894617, Special Issue on Spintronics
-
S. Ikeda, J. Hayakawa, Y. M. Lee, F. Matsukura, Y. Ohno, Y. T. Hanyu, and H. Ohno, Magnetic Tunnel Junctions for Spintronic Memories and Beyond., IEEE Trans. Electron. Devices 54 (5), 991-1002 (2007). 10.1109/TED.2007.894617 (Pubitemid 46691554)
-
(2007)
IEEE Transactions on Electron Devices
, vol.54
, Issue.5
, pp. 991-1002
-
-
Ikeda, S.1
Hayakawa, J.2
Lee, Y.M.3
Matsukura, F.4
Ohno, Y.5
Hanyu, T.6
Ohno, H.7
-
12
-
-
38049108513
-
-
10.1002/pssa.200777120
-
T. Kawahara, R. Takemura, K. Miura, J. Hayakawa, S. Ikeda, Y. M. Lee, R. Sasaki, Y. Goto, K. Ito, T. Meguro, F. Matsukura, H. Takahashi, H. Matsuoka, and H. Ohno, Phys. Status Solidi A 204 (12), 3929-3933 (2007). 10.1002/pssa. 200777120
-
(2007)
Phys. Status Solidi A
, vol.204
, Issue.12
, pp. 3929-3933
-
-
Kawahara, T.1
Takemura, R.2
Miura, K.3
Hayakawa, J.4
Ikeda, S.5
Lee, Y.M.6
Sasaki, R.7
Goto, Y.8
Ito, K.9
Meguro, T.10
Matsukura, F.11
Takahashi, H.12
Matsuoka, H.13
Ohno, H.14
-
13
-
-
33847743417
-
A novel nonvolatile memory with spin torque transfer magnetization switching: Spin-RAM
-
1609379, IEEE International Electron Devices Meeting, 2005 IEDM - Technical Digest
-
M. Hosomi, H. Yamagishi, T. Yamamoto, K. Bessho, Y. Higo, K. Yamane, H. Yamada, M. Shoji, H. Hachino, C. Fukumoto, H. Nagao, and H. Kano, A Novel Nonvolatile Memory with Spin Torque Transfer Magnetization Switching: Spin-Ram., Electron Devices Meeting, 2005, IEDM Technical Digest, IEEE International, pp. 459-462, 5 December 2005. 10.1109/IEDM2005.1609379 (Pubitemid 46370888)
-
(2005)
Technical Digest - International Electron Devices Meeting, IEDM
, vol.2005
, pp. 459-462
-
-
Hosomi, M.1
Yamagishi, H.2
Yamamoto, T.3
Bessho, K.4
Higo, Y.5
Yamane, K.6
Yamada, H.7
Shoji, M.8
Hachino, H.9
Fukumoto, C.10
Nagao, H.11
Kano, H.12
-
14
-
-
25844514240
-
-
10.1093/ietfec/e88-a.6.1408
-
A. Mochizuki, H. Kimura, M. Ibuki, and T. Hanyu, IEICE Trans. Fundamentals E88-A (6), 1408-1415 (2004). 10.1093/ietfec/e88-a.6.1408
-
(2004)
IEICE Trans. Fundamentals
, vol.88
, Issue.6
, pp. 1408-1415
-
-
Mochizuki, A.1
Kimura, H.2
Ibuki, M.3
Hanyu, T.4
-
15
-
-
84865424900
-
-
(IEEE International).
-
H. Ohno, T. Endoh, T. Hanyu, N. Kasai, and S. Ikeda, in Electron Devices Meeting (IEDM) (IEEE International, 2010).
-
(2010)
Electron Devices Meeting (IEDM)
-
-
Ohno, H.1
Endoh, T.2
Hanyu, T.3
Kasai, N.4
Ikeda, S.5
-
16
-
-
77956031280
-
-
10.1038/nmat2804
-
S. Ikeda, K. Miura, H. Yamamoto, K. Mizunuma, H. D. Gan, M. Endo, S. Kanai, J. Hayakawa, F. Matsukura, and H. Ohno, Nature Mater. 9, 721-724 (2010). 10.1038/nmat2804
-
(2010)
Nature Mater.
, vol.9
, pp. 721-724
-
-
Ikeda, S.1
Miura, K.2
Yamamoto, H.3
Mizunuma, K.4
Gan, H.D.5
Endo, M.6
Kanai, S.7
Hayakawa, J.8
Matsukura, F.9
Ohno, H.10
-
17
-
-
20944438707
-
Characterization of CoFeB electrodes for tunnel junctions
-
DOI 10.1063/1.1853833, 10C916
-
S. Cardoso, C. Cavaco, R. Ferreira, L. Pereira, M. Rickart, P. P. Freitas, N. Franco, J. Gouveia, and N. P. Barradas, J. Appl. Phys. 97 (10), 10C916 (2005). 10.1063/1.1853833 (Pubitemid 40866328)
-
(2005)
Journal of Applied Physics
, vol.97
, Issue.10
, pp. 1-3
-
-
Cardoso, S.1
Cavaco, C.2
Ferreira, R.3
Pereira, L.4
Rickart, M.5
Freitas, P.P.6
Franco, N.7
Gouveia, J.8
Barradas, N.P.9
-
18
-
-
28844507158
-
Characterization of growth and crystallization processes in CoFeBMgOCoFeB magnetic tunnel junction structure by reflective high-energy electron diffraction
-
DOI 10.1063/1.2140612, 242503
-
S. Yuasa, Y. Suzuki, T. Katayama, and K. Ando, Appl. Phys. Lett. 87 (24), 242503 (2005). 10.1063/1.2140612 (Pubitemid 41780835)
-
(2005)
Applied Physics Letters
, vol.87
, Issue.24
, pp. 1-3
-
-
Yuasa, S.1
Suzuki, Y.2
Katayama, T.3
Ando, K.4
-
19
-
-
33644618420
-
Current-induced magnetization reversal in nanopillars with perpendicular anisotropy
-
DOI 10.1038/nmat1595
-
S. Mangin, D. Ravelosona, J. A. Katine, M. J. Carey, B. D. Terris, and E. E. Fullerton, Nature Mater. 5 (3), 210-215 (2006). 10.1038/nmat1595 (Pubitemid 43320636)
-
(2006)
Nature Materials
, vol.5
, Issue.3
, pp. 210-215
-
-
Mangin, S.1
Ravelosona, D.2
Katine, J.A.3
Carey, M.J.4
Terris, B.D.5
Fullerton, E.E.6
-
20
-
-
84863537067
-
-
mLogic: Ultra-low voltage non-volatile logic circuits using STT-MTJ devices, in (DAC '12), ACM, New York, NY, USA, 10.1145/2228360.2228446
-
D. Morris, D. Bromberg, J. G. Zhu, and L. Pileggi. 2012. mLogic: Ultra-low voltage non-volatile logic circuits using STT-MTJ devices, in Proceedings of the 49th Annual Design Automation Conference (DAC '12), ACM, New York, NY, USA, 486-491. 10.1145/2228360.2228446
-
(2012)
Proceedings of the 49th Annual Design Automation Conference
, pp. 486-491
-
-
Morris, D.1
Bromberg, D.2
Zhu, J.G.3
Pileggi, L.4
-
21
-
-
78650352183
-
-
10.1063/1.3524230
-
K. Yakashiji, T. Saruya, H. Kubota, A. Fukushima, T. Nagahama, S. Yuasa, and K. Ando, Appl. Phys. Lett. 97, 232508 (2010). 10.1063/1.3524230
-
(2010)
Appl. Phys. Lett.
, vol.97
, pp. 232508
-
-
Yakashiji, K.1
Saruya, T.2
Kubota, H.3
Fukushima, A.4
Nagahama, T.5
Yuasa, S.6
Ando, K.7
-
22
-
-
79955398912
-
-
10.1063/1.3554204
-
M. Yamanouchi, R. Koizumi, S. Ikeda, H. Sato, K. Mizunuma, K. Miura, H. D. Gan, F. Matsukura, and H. Ohno, J. Appl. Phys. 109, 07C712 (2011). 10.1063/1.3554204
-
(2011)
J. Appl. Phys.
, vol.109
-
-
Yamanouchi, M.1
Koizumi, R.2
Ikeda, S.3
Sato, H.4
Mizunuma, K.5
Miura, K.6
Gan, H.D.7
Matsukura, F.8
Ohno, H.9
-
23
-
-
78751486497
-
-
10.1063/1.3536482
-
D. C. Worledge, G. Hu, D. W. Abraham, J. Z. Sun, P. L. Trouilloud, J. Nowak, S. Brown, M. C. Gaidis, E. J. O'Sullivan, and R. P. Robertazzi, Appl. Phys. Lett. 98, 022501 (2010). 10.1063/1.3536482
-
(2010)
Appl. Phys. Lett.
, vol.98
, pp. 022501
-
-
Worledge, D.C.1
Hu, G.2
Abraham, D.W.3
Sun, J.Z.4
Trouilloud, P.L.5
Nowak, J.6
Brown, S.7
Gaidis, M.C.8
O'Sullivan, E.J.9
Robertazzi, R.P.10
-
24
-
-
84860534199
-
-
10.1063/1.4707964
-
S. V. Karthik, Y. K. Takahashi, T. Ohkubo, K. Hono, H. D. Gan, S. Ikeda, and H. Ohno, J. Appl. Phys. 111 (8), 083922 (2012). 10.1063/1.4707964
-
(2012)
J. Appl. Phys.
, vol.111
, Issue.8
, pp. 083922
-
-
Karthik, S.V.1
Takahashi, Y.K.2
Ohkubo, T.3
Hono, K.4
Gan, H.D.5
Ikeda, S.6
Ohno, H.7
-
25
-
-
80052294961
-
-
10.1103/PhysRevB.84.054401
-
H. X. Yang, M. Chshiev, B. Dieny, J. H. Lee, A. Manchon, and K. H. Shin, Phys. Rev. B 84 (5), 054401 (2011). 10.1103/PhysRevB.84.054401
-
(2011)
Phys. Rev. B
, vol.84
, Issue.5
, pp. 054401
-
-
Yang, H.X.1
Chshiev, M.2
Dieny, B.3
Lee, J.H.4
Manchon, A.5
Shin, K.H.6
|