Distinctive current-induced magnetization switching in a current-perpendicular-to-plane giant-magnetoresistance nanopillar with a synthetic antiferromagnet free layer

Applied Physics Letters

Volumn 86, Issue 24, 2005, Pages 1-3

  Ochiai, T ^a   Jiang, Y ^b   Hirohata, A ^b   Tezuka, N ^a,b   Sugimoto, S ^a   Inomata, K ^a,b  

^a TOHOKU UNIVERSITY   (Japan)

^b JAPAN SCIENCE AND TECHNOLOGY AGENCY   (Japan)

Author keywords

[No Author keywords available]

Indexed keywords

ANTIFERROMAGNETIC MATERIALS; COBALT COMPOUNDS; ELECTRIC CURRENTS; ELECTRON TRANSITIONS; ELECTRON TUBES; GIANT MAGNETORESISTANCE; MAGNETIC FIELD EFFECTS; MAGNETIC FIELDS; MAGNETIZATION; OXIDATION; RANDOM ACCESS STORAGE; SWITCHING; TORQUE;

CURRENT-INDUCED MAGNETIZATION SWITCHING (CIMS); ROOM TEMPERATURE; SPIN ELECTRON REFLECTION; SYNTHETIC ANTIFERROMAGNET (SYAF) FREE LAYERS;

NANOSTRUCTURED MATERIALS;

EID: 21344471963     PISSN: 00036951     EISSN: None     Source Type: Journal    
DOI: 10.1063/1.1949709     Document Type: Article

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