2-Mb SPRAM design: Bi-directional current write and parallelizing-direction current read based on spin-transfer torque switching

Physica Status Solidi (A) Applications and Materials Science

Volumn 204, Issue 12, 2007, Pages 3929-3933

  Kawahara, T ^a   Takemura, R ^a   Miura, K ^a   Hayakawa, J ^a,b   Ikeda, S ^b   Lee, Y M ^b   Sasaki, R ^b   Goto, Y ^a   Ito, K ^a   Meguro, T ^b   Matsukura, F ^b   Takahashi, H ^a   Matsuoka, H ^a   Ohno, H ^b  

^a HITACHI LTD   (Japan)

^b TOHOKU UNIVERSITY   (Japan)

Author keywords

[No Author keywords available]

Indexed keywords

SPIN-TRANSFER TORQUE SWITCHING; SPRAM (SPIN-TRANSFER TORQUE RAM); TUNNELING BARRIER CELLS;

ELECTRON TUNNELING; MICROPROCESSOR CHIPS; RANDOM ACCESS STORAGE; TORQUE;

SWITCHING SYSTEMS;

EID: 38049108513     PISSN: 18626300     EISSN: 18626319     Source Type: Journal    
DOI: 10.1002/pssa.200777120     Document Type: Article

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6. T. Kawahara et al., ISSCC Digest of tech. papers, 480-481 (2007).