Solid phase epitaxy of amorphous Ge on Si in N2 atmosphere

Applied Physics Letters

Volumn 94, Issue 11, 2009, Pages

  Lieten, R R ^a   Degroote, S ^a   Leys, M ^a   Posthuma, N E ^a   Borghs, G ^a  

^a IMEC   (Belgium)

Author keywords

[No Author keywords available]

Indexed keywords

CRYSTAL GROWTH; CRYSTAL ORIENTATION; GERMANIUM; PLASMA DEPOSITION; PLASMA ENHANCED CHEMICAL VAPOR DEPOSITION; SEMICONDUCTING SILICON COMPOUNDS; SILICON; SUBSTRATES; THREE DIMENSIONAL;

AMORPHOUS GERMANIUMS; CHARGE MOBILITIES; CRYSTAL QUALITIES; ELECTRICAL MEASUREMENTS; GROWTH MODES; HIGH QUALITIES; LAYER BY LAYERS; MOBILE ATOMS; N2 AMBIENT; N2 ATMOSPHERES; SI (1 1 1); SI(0 0 1); SI(111) SUBSTRATES; SINGLE-CRYSTALLINE; SMOOTH LAYERS; SOLID-PHASE EPITAXIES; THREE-DIMENSIONAL GROWTHS;

AMORPHOUS SILICON;

EID: 63049090193     PISSN: 00036951     EISSN: None     Source Type: Journal    
DOI: 10.1063/1.3098075     Document Type: Article

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