Hot-Probe method for evaluation of impurities concentration in semiconductors

Microelectronics Journal

Volumn 37, Issue 9, 2006, Pages 910-915

  Golan, G ^a   Axelevitch, A ^a   Gorenstein, B ^a   Manevych, V ^a  

^a HOLON INSTITUTE OF TECHNOLOGY   (Israel)

Author keywords

Charged carriers concentration; Hot Probe method; Semiconductors film properties; Type of charged carriers

Indexed keywords

CARRIER CONCENTRATION; CHARGE CARRIERS; PARAMETER ESTIMATION; THIN FILMS;

CHARGED CARRIERS CONCENTRATION; HOT-PROBE METHOD; SEMICONDUCTORS FILM PROPERTIES; TYPE OF CHARGED CARRIERS;

SEMICONDUCTOR MATERIALS;

EID: 33745896221     PISSN: 00262692     EISSN: None     Source Type: Journal    
DOI: 10.1016/j.mejo.2006.01.014     Document Type: Article

References (7)

1. B. Van Zeghbroeck, Principle of Semiconductor Devices, 1997, 〈http://ece-www.colorado.edu/~bart/book/〉.
2. Bar-Lev A.., and Golan G. Semiconductors (1996), The Open University of Israel, Tel-Aviv, Israel (Hebrew)
3. Volovichev I.N., and Gurevich Yu.G. Generation and recombination in semiconductors. Semiconductors 35 3 (2001) 306-315
4. Kasap S.O. Principle of Electrical Engineering Materials and Devices (1997), McGraw Hill, Boston
5. Golan G., Axelevitch A., Sigalov B., and Gorenstein B. Investigation of phase transition mechanism in vanadium oxide thin films. J. Optoelectronics Adv. Mat. 6 1 (2004) 189-195
6. Fihtengolz G.M. Mathematical Analysis Fundamentals (1957), GITTL, Moscow (in Russian)
7. Sze S.M. Physics of Semiconductor Devices (1981), Wiley, New York