Amorphization kinetics of germanium under ion implantation

Materials Science in Semiconductor Processing

Volumn 9, Issue 4-5 SPEC. ISS., 2006, Pages 664-667

  Koffel, S ^a   Claverie, A ^b   BenAssayag, G ^b   Scheiblin, P ^a  

^a CEA LETI   (France)

^b CEMES CNRS   (France)

Author keywords

Amorphization; Critical damage energy density model; Germanium; Ion implantation; Transmission electron microscopy

Indexed keywords

AMORPHIZATION; GERMANIUM; REACTION KINETICS; THICKNESS MEASUREMENT; TRANSMISSION ELECTRON MICROSCOPY;

CELLULAR STRUCTURE; CRITICAL DAMAGE ENERGY DENSITY MODEL; DAMAGE ACCUMULATION;

ION IMPLANTATION;

EID: 33845213170     PISSN: 13698001     EISSN: None     Source Type: Journal    
DOI: 10.1016/j.mssp.2006.08.015     Document Type: Article

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