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Volumn 112, Issue 3, 2012, Pages

Nonvolatile memory thin film transistors using CdSe/ZnS quantum dot-poly(methyl methacrylate) composite layer formed by a two-step spin coating technique

(4) Chen, Ying Chih a Huang, Chun Yuan b Yu, Hsin Chieh a Su, Yan Kuin a,c

a NATIONAL CHENG KUNG UNIVERSITY (Taiwan)

b NATIONAL TAITUNG UNIVERSITY (Taiwan)

c KUN SHAN UNIVERSITY (Taiwan)

Author keywords

[No Author keywords available]

Indexed keywords

CDSE/ZNS; CHARGE STORAGE; COMPOSITE LAYER; CORE/SHELL; CRYSTAL QUALITIES; CRYSTALLINE SIZE; DEVICE CONFIGURATIONS; DIFFRACTION SPECTRA; FLOATING GATES; MEMORY WINDOW; METHYL METHACRYLATES; NON-VOLATILE MEMORIES; PENTACENE FILM; PENTACENES; PROGRAMMABLE MEMORY; RETENTION TIME; SOURCE-DRAIN; STRUCTURAL DISORDERS; THIN-FILM TRANSISTOR (TFTS);

ATOMIC FORCE MICROSCOPY; COATINGS; ESTERS; SEMICONDUCTOR QUANTUM DOTS; SPIN COATING; THIN FILM TRANSISTORS; THIN FILMS; X RAY DIFFRACTION;

NANOCOMPOSITE FILMS;

EID: 84865211589 PISSN: 00218979 EISSN: None Source Type: Journal
DOI: 10.1063/1.4745041 Document Type: Article

Times cited : (21)

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