Electret mechanism, hysteresis, and ambient performance of sol-gel silica gate dielectrics in pentacene field-effect transistors

Applied Physics Letters

Volumn 91, Issue 24, 2007, Pages

  Cahyadi, T ^a,c   Tan, H S ^a   Mhaisalkar, S G ^a   Lee, P S ^a   Boey, F ^a   Chen, Z K ^b   Ng, C M ^c   Rao, V R ^d   Qi, G J ^e  

^a NANYANG TECHNOLOGICAL UNIVERSITY   (Singapore)

^b INSTITUTE OF MATERIALS RESEARCH AND ENGINEERING   (Singapore)

^c CHARTERED SEMICONDUCTOR MANUFACTURING LTD   (Singapore)

^d INDIAN INSTITUTE OF TECHNOLOGY BOMBAY   (India)

^e SINGAPORE INSTITUTE OF MANUFACTURING TECHNOLOGY   (Singapore)

Author keywords

[No Author keywords available]

Indexed keywords

FIELD EFFECT TRANSISTORS; HYSTERESIS; SILICA; SOL-GELS;

BLOCKING LAYERS; DRAIN CURRENTS; ELECTRET MECHANISM;

GATE DIELECTRICS;

EID: 37149006133     PISSN: 00036951     EISSN: None     Source Type: Journal    
DOI: 10.1063/1.2821377     Document Type: Article

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