Characteristics of Al-doped ZnO films grown by atomic layer deposition for silicon nanowire photovoltaic device

Journal of Nanoscience and Nanotechnology

Volumn 12, Issue 7, 2012, Pages 5330-5335

  Oh, Byeong Yun ^a,b   Han, Jin Woo ^a   Seo, Dae Shik ^a   Kim, Kwang Young ^b   Baek, Seong Ho ^c   Jang, Hwan Soo ^c   Kim, Jae Hyun ^c  

^a Yonsei University   (South Korea)

^b Korea Institute of Industrial Technology   (South Korea)

^c Daegu Gyeongbuk Institute of Science and Technology   (South Korea)

Author keywords

Al Doped Zinc Oxide; Atomic Layer Deposition; Silicon Nanowire Photovoltaic Device; Zinc Oxide II VI Semiconductors

Indexed keywords

ATOMIC LAYER DEPOSITION; ELECTRIC CONDUCTIVITY; NANOWIRES; ZINC OXIDE;

3-DIMENSIONAL; AL-CONCENTRATION; AL-DOPED ZINC OXIDE; AL-DOPED ZNO; BAND GAP ENERGY; CONFORMAL DEPOSITION; DIFFRACTION PEAKS; ELECTRICAL RESISTIVITY; ELECTRONIC DEVICE; II-VI SEMICONDUCTOR; LAYER-BY-LAYER GROWTH; MERIT VALUES; OPTICAL CHARACTERISTICS; PHOTOVOLTAIC DEVICES; SILICON NANOWIRES; SPUTTERING METHODS; SURFACE CHEMICAL REACTIONS; SURFACE PASSIVATION; TRANSPARENT ELECTRODE; ZNO;

ALUMINUM;

EID: 84865120281     PISSN: 15334880     EISSN: 15334899     Source Type: Journal    
DOI: 10.1166/jnn.2012.6255     Document Type: Article

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