Thin transparent W-Doped Indium-Zinc Oxide (WIZO) layer on glass

Journal of Nanoscience and Nanotechnology

Volumn 12, Issue 7, 2012, Pages 5604-5608

  Lee, Young Jun ^a   Lim, Byung Wook ^a   Kim, Joo Hyung ^a   Kim, Tae Won ^b   Oh, Byeong Yun ^b   Heo, Gi Seok ^b   Kim, Kwang Young ^b  

^a Chosun University   (South Korea)

^b Korea Institute of Industrial Technology   (South Korea)

Author keywords

Amorphous; Crystalline; Electrical Properties; Oxide Thin Film Transistor; Post Annealing; Transparent; Tungsten (W); W Doped Indium Zinc Oxide (WIZO)

Indexed keywords

ACTIVE CHANNEL LAYERS; AMORPHOUS STRUCTURES; ANNEALING EFFECTS; ANNEALING PROCESS; ANNEALING TEMPERATURES; AS ANNEALING; AS-GROWN; CRYSTALLINITIES; GLASS SUBSTRATES; INDIUM ZINC OXIDES; OXIDE THIN FILMS; POST ANNEALING; POST-ANNEALING TEMPERATURE; PROCESS CONDITION; RF-MAGNETRON CO-SPUTTERING; ROOM TEMPERATURE; STRUCTURAL AND ELECTRICAL PROPERTIES; SURFACE OBSERVATION; TRANSPARENT; VISIBLE RANGE;

AMORPHOUS MATERIALS; CARRIER CONCENTRATION; CRYSTALLINE MATERIALS; ELECTRIC PROPERTIES; SUBSTRATES; THIN FILM TRANSISTORS; TUNGSTEN; ZINC OXIDE;

ANNEALING;

EID: 84865112818     PISSN: 15334880     EISSN: 15334899     Source Type: Journal    
DOI: 10.1166/jnn.2012.6296     Document Type: Article

References (21)

1. K. Nomura, H. Ohta, A. Takagi, T. Kamiya, M. Hirano, and H. Hosono, Nature 432, 488 (2004).
2. H. Yabuta, M. Sano, K. Abe, T. Aiba, T. Den, H. Kumomi, K. Nomura, T. Kamiya, and H. Hosono, Appl. Phys. Lett. 89, 112 (2006).
3. K. Nomura, H. Ohta, K. Ueda, T. Kamiya, M. Hirano, and H. Hosono, Science 300, 1269 (2003).
4. R. L. Hoffman, B. J. Norris, and J. F. Wager, Appl. Phys. Lett. 82, 733 (2003).
5. Y. Kwon, Y. Li, Y. W. Heo, M. Jones, P. H. Holloway, D. P. Norton, Z. V. Park, and S. Li, Appl. Phys. Lett. 84, 2685 (2004).
6. W. Lim, S. H. Kim, Y. L. Wang, J. W. Lee, D. P. Norton, S. J. Pearton, F. Ren, and I. I. Kravchenko, J. Vac. Sci. Technol. B, Microelectron. Process. Phenom. 26, 959 (2008).
7. W. Lim, S. H. Kim, Y. L.Wang, J.W. Lee, D. P. Norton, S. J. Pearton, F. Ren, and I. I. Kravchenko, J. Electrochem. Soc. 155, 383 (2008).
8. H. Takatsuji, S. Tsuji, K. Kuroda, and H. Saka, Mater. Trans. 40, 899 (1999).
9. T. Minami, T. Kakumu, and S. Takata, J. Vac. Sci. Technol. A 14, 1704 (1996).
10. N. Naghavi, A. Rougier, C. Marcel, C. Guery, J. B. Leriche, and J. M. Tarascon, Thin Solid Films 360, 233 (2000).
11. A. Kaijo, Display Imaging 4, 143 (1996).
12. W. J. Lee, Y.-K. Fang, J.-J. Ho, C.-Y. Chen, L.-H. Chio, S.-J. Wang, F. Dai, T. Hsieh, R. Y. Tsai, D. Huang, and F. C. Ho, Solid State Electron. 46, 477 (2002).
13. D.-H. Son, D.-H. Kim, J.-H. Kim, S.-J. Sung, E.-A. Jung, and J.-K. Kang, Electrochem. Solid-State Lett. 13, H274 (2010).
14. S. Jeong, Y.-G. Ha, J. Moon, A. Facchetti, and T. J. Marks, Appl. Phys. Lett. 91, 091910 (2007)
15. Adv. Mater. 22, 1346 (2010)
16. H. Kim, J. S. Horwitz, W. H. Kim, S. B. Qadri, and Z. H. Karafi, Appl. Phys. Lett. 83, 3809 (2003).
17. J.-H. Kim, V. Ignatova, P. K?ucher, J. Heitmann, L. Oberbeck, and U. Schröder, Thin Solid Films 516, 8333 (2008).
18. T. Sasabayashi, N. Ito, E. Nishimura, M. Kon, P. K. Song, K. Utsumi, A. Kaijo, and Y. Shigesato, Thin Solid Films 445, 219 (2003).
19. B.-Y. Oh, J.-C. Park, Y.-J. Lee, S.-J. Cha, J.-H. Kim, K.-Y. Kim, T.-W. Kim, and G.-S. Heo, J. Solid State Chem. 184, 2462 (2011).
20. N. H. Kim, J. H. Myung, H. W. Kim, and C. Lee, Phys. Stat. Sol. 202, 108 (2005).
21. Y. S. Jung, J. Y. Seo, D. W. Lee, and D. Y. Jeon, Thin Solid Films 445, 63 (2005).