Organic light-emitting diode on indium zinc oxide film prepared by ion assisted deposition dc sputtering system

Solid-State Electronics

Volumn 46, Issue 4, 2002, Pages 477-480

  Lee, W J ^a   Fang, Y K ^a   Ho, J J ^b   Chen, C Y ^b   Chiou, L H ^a   Wang, S J ^a   Dai, F ^c   Hsieh, T ^c   Tsai, R Y ^c   Huang, D ^c   Ho, F C ^c  

^a NATIONAL CHENG KUNG UNIVERSITY   (Taiwan)

^b FORTUNE INSTITUTE OF TECHNOLOGY   (Taiwan)

^c INDUSTRIAL TECHNOLOGY RESEARCH INSTITUTE   (Taiwan)

Author keywords

Electroluminescence performance; Hardness poly carbonate substrate; Indium zinc oxide; Ion assisted deposition; Organic light emitting devices

Indexed keywords

ANNEALING; CARRIER CONCENTRATION; CARRIER MOBILITY; ELECTRIC CONDUCTIVITY; ELECTROLUMINESCENCE; FILM PREPARATION; HALL EFFECT; ION BEAM ASSISTED DEPOSITION; MAGNETRON SPUTTERING; POLYCARBONATES; SEMICONDUCTING FILMS; SEMICONDUCTING INDIUM COMPOUNDS;

ORGANIC LIGHT EMITTING DIODES (OLED);

LIGHT EMITTING DIODES;

EID: 18244383556     PISSN: 00381101     EISSN: None     Source Type: Journal    
DOI: 10.1016/S0038-1101(01)00307-0     Document Type: Article

References (9)

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7. Use of ion beam assisted deposition to modify the microstructure and properties of thin films
8. 3 thin films prepared by dc magnetron sputtering
9. Electrical, optical, and structural properties of indium-tin-oxide thin films for organic light-emitting devices