On the variability of HfOx RRAM: From numerical simulation to compact modeling

Technical Proceedings of the 2012 NSTI Nanotechnology Conference and Expo, NSTI-Nanotech 2012

Volumn , Issue , 2012, Pages 815-820

  Guan, Ximeng ^a   Yu, Shimeng ^a   Wong, H S Philip ^a  

^a Stanford University   (United States)

Author keywords

Compact model; Resistive switching; RRAM; Variation

Indexed keywords

ANALYTICAL EQUATIONS; COMPACT MODEL; COMPACT MODELING; COMPARISON WITH EXPERIMENTS; GAP DISTANCES; GAP SIZE; I - V CURVE; NUMERICAL SIMULATORS; RANDOM PERTURBATIONS; RESISTANCE VARIATIONS; RESISTIVE MEMORIES; RESISTIVE SWITCHING; RRAM; SWITCHING BEHAVIORS; SWITCHING MECHANISM; VARIATION;

EXHIBITIONS; FABRICATION; FLUIDICS; METALLIC COMPOUNDS; NANOTECHNOLOGY;

RANDOM ACCESS STORAGE;

EID: 84864961255     PISSN: None     EISSN: None     Source Type: Conference Proceeding    
DOI: None     Document Type: Conference Paper

References (16)

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