Comparative high-temperature dc characterization of HEMTs with GaN and AlGaN channel layers

2010 International Conference on Compound Semiconductor Manufacturing Technology, CS MANTECH 2010

Volumn , Issue , 2010, Pages

  Hatano, M ^a   Kunishio, N ^a   Chikaoka, H ^a   Yamazaki, J ^a   Makhzani, Z B ^a   Yafune, N ^b,c   Sakuno, K ^c   Hashimoto, S ^d   Akita, K ^d   Yamamoto, Y ^d   Kuzuhara, M ^a  

^a UNIVERSITY OF FUKUI   (Japan)

^b Japan Research and Development Center for Metal   (Japan)

^c SHARP CORPORATION   (Japan)

^d SUMITOMO ELECTRIC INDUSTRIES LTD   (Japan)

Author keywords

AlGaN channel; HEMT; High temperature

Indexed keywords

ALGAN CHANNEL; DC CHARACTERISTICS; DC CHARACTERIZATION; HIGH TEMPERATURE; HIGH-TEMPERATURE ELECTRONICS; MAXIMUM TRANSCONDUCTANCE; SATURATION CURRENT; TEMPERATURE COEFFICIENT;

GALLIUM NITRIDE; SEMICONDUCTOR DEVICE MANUFACTURE;

HIGH ELECTRON MOBILITY TRANSISTORS;

EID: 84887382064     PISSN: None     EISSN: None     Source Type: Conference Proceeding    
DOI: None     Document Type: Conference Paper

References (9)

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9. N. Yafune et al., "Low resistivity V/Al/Mo/Au ohmic contacts on AlGaN/GaN annealed at low temperatures, " Jpn. J. Appl. Phys., accepted for publication in April 2010.