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Thin Solid Films

Volumn 520, Issue 22, 2012, Pages 6807-6812

Optical absorption dependence on composition and thickness of In xGa 1 - XN (0.05 < × < 0.22) grown on GaN/sapphire

(5) Jampana, Balakrishnam R a Weiland, Conan R a Opila, Robert L a Ferguson, Ian T b Honsberg, Christiana B c

a UNIVERSITY OF DELAWARE (United States)

b University of North Carolina at Charlotte (United States)

c Arizona State University (United States)

Author keywords

Crystalline defects; Indium gallium nitride; Optical absorption; X ray diffraction

Indexed keywords

AREAL COVERAGE; CRITICAL LAYER; CRITICAL LAYER THICKNESS; CRYSTALLINE DEFECTS; GAN/SAPPHIRE; GROWTH TECHNIQUES; INCIDENT LASER LIGHT; INDIUM GALLIUM NITRIDE; INGAN EPILAYERS; NON-RADIATIVE RECOMBINATIONS; OPTICAL ABSORPTION PROPERTIES; OPTICAL BEHAVIOR; PHOTOLUMINESCENCE RESPONSE; SUBBANDS; V-DEFECTS;

CRYSTALLINE MATERIALS; ELECTRIC FIELDS; ENERGY GAP; EPITAXIAL GROWTH; GALLIUM NITRIDE; INDIUM; LIGHT ABSORPTION; THIN FILMS; X RAY DIFFRACTION;

DEFECTS;

EID: 84864702612 PISSN: 00406090 EISSN: None Source Type: Journal
DOI: 10.1016/j.tsf.2012.07.003 Document Type: Article

Times cited : (4)

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