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Physica Status Solidi (A) Applied Research

Volumn 190, Issue 1, 2002, Pages 135-140

Optical investigations and absorption coefficient determination of InGaN/GaN quantum wells

(8) Kvietkova, J a Siozade, L a Disseix, P a Vasson, A a Leymarie, J a Damilano, B b Grandjean, N b Massies, J b

a UNIVERSITÉ BLAISE PASCAL (France)

b CRHEA CNRS (France)

Author keywords

[No Author keywords available]

Indexed keywords

THERMALLY DETECTED OPTICAL ABSORPTION (TDOA);

DENSITY (OPTICAL); ELECTRIC FIELD EFFECTS; GALLIUM NITRIDE; LIGHT ABSORPTION; MOLECULAR BEAM EPITAXY; PHOTOLUMINESCENCE; SAPPHIRE; SEMICONDUCTING INDIUM COMPOUNDS; SUBSTRATES;

SEMICONDUCTOR QUANTUM WELLS;

EID: 0036502630 PISSN: 00318965 EISSN: None Source Type: Journal
DOI: 10.1002/1521-396X(200203)190:1<135::AID-PSSA135>3.0.CO;2-1 Document Type: Conference Paper

Times cited : (14)

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