The effect of dislocations on the optical absorption of heteroepitaxial InP and GaAs on Si

Journal of Applied Physics

Volumn 79, Issue 12, 1996, Pages 9273-9277

  Iber, H ^a   Peiner, E ^a   Schlachetzki, A ^a  

^a TECHNICAL UNIVERSITY OF BRAUNSCHWEIG   (Germany)

Author keywords

[No Author keywords available]

Indexed keywords

EID: 0001110161     PISSN: 00218979     EISSN: None     Source Type: Journal    
DOI: 10.1063/1.362577     Document Type: Article

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