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Volumn 45, Issue 33, 2012, Pages

Nanocrystalline Si:H thin films grown at room temperature with plasma-enhanced chemical vapour deposition at a very high pressure

(5) Gao, L a Lu, N P a Liao, L G a Ji, A L a Cao, Z X a

a INSTITUTE OF PHYSICS (China)

Author keywords

[No Author keywords available]

Indexed keywords

CHEMICAL VAPOUR DEPOSITION; CONFINEMENT EFFECTS; CRYSTALLINE VOLUME FRACTION; GAS PRESSURES; HEATING EFFECT; HIGH PRESSURE; HYDROGEN CONTENTS; HYDROGENATED NANOCRYSTALLINE SILICON (NC-SI:H); NANOCRYSTALLINE PHASE; NANOCRYSTALLINE SI; NC-SI:H; NEAR ROOM TEMPERATURE; ROOM TEMPERATURE; SI NANOCRYSTALLITES; SUBSTRATE TEMPERATURE;

ELECTROMAGNETIC FIELDS; PLASMA ENHANCED CHEMICAL VAPOR DEPOSITION; PLASMA SHEATHS; SUBSTRATES; VAPORS;

SILICON;

EID: 84864702456 PISSN: 00223727 EISSN: 13616463 Source Type: Journal
DOI: 10.1088/0022-3727/45/33/335104 Document Type: Article

Times cited : (10)

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